WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2009120343) SELECTIVE OXIDATIVE REMOVAL OF A SELF-ASSEMBLED MONOLAYER FOR CONTROLLED NANOFABRICATION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/120343    International Application No.:    PCT/US2009/001878
Publication Date: 01.10.2009 International Filing Date: 24.03.2009
IPC:
C30B 25/04 (2006.01), B81C 1/00 (2006.01), C23C 16/455 (2006.01)
Applicants: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY [US/US]; 1705 El Camino Real Palo Alto, CA 94306-1106 (US) (For All Designated States Except US).
HONDA MOTOR CO., LTD [JP/JP]; 1-1 Minamiaoyama 2-chome, Minato-ku Tokyo , 107-8556 (JP) (For All Designated States Except US).
DASGUPTA, Neil [US/US]; (US) (For US Only).
KIM, Young, Beom [KR/US]; (US) (For US Only).
LEE, Wonyoung [KR/US]; (US) (For US Only).
PRINZ, Friedrich, B. [AT/US]; (US) (For US Only)
Inventors: DASGUPTA, Neil; (US).
KIM, Young, Beom; (US).
LEE, Wonyoung; (US).
PRINZ, Friedrich, B.; (US)
Agent: JACOBS, Ron; (US).
PARRIS, James; (US).
MAI, Trieu; (US).
LODENKAMPER, Robert; (US).
MCFARLANE, Thomas, J.; (US)
Priority Data:
61/070,714 24.03.2008 US
Title (EN) SELECTIVE OXIDATIVE REMOVAL OF A SELF-ASSEMBLED MONOLAYER FOR CONTROLLED NANOFABRICATION
(FR) ÉLIMINATION OXYDATIVE SÉLECTIVE D'UNE MONOCOUCHE AUTOASSEMBLÉE –POUR UNE NANOFABRICATION CONTRÔLÉE
Abstract: front page image
(EN)Improved tip-patterned atomic layer deposition (ALD) is provided by using a scanning probe microscope (SPM) tip to define an oxide pattern in a self-assembled monolayer deposited on a substrate. The oxide pattern can directly define the ALD deposition pattern. Alternatively, the oxide pattern can be removed (e.g., with a chemical etch), and the resulting exposed substrate pattern can be used to define the ALD deposition pattern.
(FR)L'invention porte sur un dépôt amélioré d'une couche atomique (ALD) à motifs créés par la pointe d'un microscope à effet tunnel (SPM) pour définir un motif d'oxyde dans une monocouche autoassemblée déposée sur un substrat. Le motif d'oxyde peut définir directement le motif déposé par ALD. En variante, le motif d'oxyde peut être éliminé (p.ex. par attaque chimique) et le motif exposé du substrat résultant peut servir à définir le motif déposé par ALD.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)