WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2009119896) ALN BULK SINGLE CRYSTAL, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING ALN SINGLE CRYSTAL BULK
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/119896    International Application No.:    PCT/JP2009/056841
Publication Date: 01.10.2009 International Filing Date: 26.03.2009
IPC:
C30B 29/38 (2006.01), C30B 23/06 (2006.01)
Applicants: JFE MINERAL COMPANY, LTD [JP/JP]; Shibakoen First Building, 8-2, Shiba 3-chome, Minato-ku, Tokyo, 1050014 (JP) (For All Designated States Except US).
Friedrich-Alexander-Universitat Erlangen-Nurnberg [DE/DE]; Schlossplatz 4, Erlangen, D91054 (DE) (For All Designated States Except US).
CrystAl-N GmbH [DE/DE]; Am Weichselgarten 7, Erlangen 91058 (DE) (For All Designated States Except US).
NAGATA, Shunro [JP/JP]; (JP) (For US Only).
WINNACKER, Albrecht [DE/DE]; (DE) (For US Only).
EPELBAUM, Boris M [DE/DE]; (DE) (For US Only).
BICKERMANN, Matthias [DE/DE]; (DE) (For US Only).
FILIP, Octavian [DE/DE]; (DE) (For US Only).
HEIMANN, Paul [DE/DE]; (DE) (For US Only)
Inventors: NAGATA, Shunro; (JP).
WINNACKER, Albrecht; (DE).
EPELBAUM, Boris M; (DE).
BICKERMANN, Matthias; (DE).
FILIP, Octavian; (DE).
HEIMANN, Paul; (DE)
Agent: OCHIAI, Kenichiro; c/o Patent Application Dept. JFE Techno-Research Corporation 7th Floor, Yanagiya Building 1-10, Nihonbashi 2-chome Chuo-ku, Tokyo 1030027 (JP)
Priority Data:
2008-088059 28.03.2008 JP
2009-063127 16.03.2009 JP
Title (EN) ALN BULK SINGLE CRYSTAL, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING ALN SINGLE CRYSTAL BULK
(FR) MONOCRISTAL MASSIF D'ALN, DISPOSITIF SEMI-CONDUCTEUR ET PROCÉDÉ DE PRODUCTION DE MONOCRISTAL MASSIF D'ALN
(JA) AlNバルク単結晶及び半導体デバイス並びにAlN単結晶バルクの製造方法
Abstract: front page image
(EN)Disclosed is an AlN single crystal bulk, which, even when a single crystal of a dissimilar material is used as a crystal, suffers from no significant defects and has high quality. Also disclosed are a process for producing the AlN single crystal bulk and a semiconductor device. The production process is characterized in that a plane inclined by 10 to 80 degrees to a C plane is selected as a surface (1a) of a hexagonal single crystal substrate which is a seed crystal (1) (Fig. 1 (a)) and an AlN single crystal (2) is grown as a growth plane (2a) on the surface (1a) by a sublimation method (Fig. 1(b)).
(FR)L'invention concerne un monocristal massif d'AlN, qui, même si l'on utilise un monocristal d'une matière différente comme cristal, est exempt de défauts importants et présente une qualité supérieure. L'invention concerne aussi un procédé de production du monocristal massif d'AlN et un dispositif semi-conducteur. Le procédé de production est caractérisé par les étapes consistant à: sélectionner un plan incliné de 10 à 80 degrés par rapport à un plan C comme surface (1a) d'un substrat de monocristal hexagonal constituant un germe cristallin (1) (Fig. 1 (a)), et faire croître un monocristal d'AlN (2) comme plan de croissance (2a) sur la surface(1a) par un procédé de sublimation (Fig. 1(b)).
(JA)本発明の目的は、結晶として異種材料の単結晶を用いた場合であっても、欠陥が少なく、高品質のAlN単結晶バルク及びその製造方法、並びに半導体デバイスを提供することにある。 種結晶1としての六方晶系単結晶基板の表面1aとして、C面に対して10~80°傾斜した面を選択し(図1(a))、この表面1a上に、昇華法によりAlN単結晶2を成長面2aとして成長させることを特徴とする(図1(b))。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)