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1. (WO2009119603) ALUMINUM NITRIDE SUBSTRATE WITH OXIDE LAYER, ALUMINUM NITRIDE SINTERED COMPACT, PROCESSES FOR PRODUCING THE ALUMINUM NITRIDE SUBSTRATE AND THE ALUMINUM NITRIDE SINTERED COMPACT, CIRCUIT BOARD, AND LED MODULE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/119603    International Application No.:    PCT/JP2009/055850
Publication Date: 01.10.2009 International Filing Date: 24.03.2009
IPC:
C04B 35/581 (2006.01), C04B 41/80 (2006.01), C04B 41/87 (2006.01), H01L 23/15 (2006.01), H01L 33/64 (2010.01)
Applicants: PANASONIC ELECTRIC WORKS CO., LTD. [JP/JP]; 1048, Oaza-Kadoma, Kadoma-shi, Osaka, 5718686 (JP) (For All Designated States Except US).
HIRAYAMA, Kentarou [JP/JP]; (JP) (For US Only).
IMAI, Junji [JP/JP]; (JP) (For US Only).
SATO, Masahiro [JP/JP]; (JP) (For US Only)
Inventors: HIRAYAMA, Kentarou; (JP).
IMAI, Junji; (JP).
SATO, Masahiro; (JP)
Agent: KOTANI, Etsuji; Osaka Nakanoshima Building 2nd Floor, 2-2, Nakanoshima 2-chome, Kita-ku, Osaka-shi, Osaka, 5300005 (JP)
Priority Data:
2008-079147 25.03.2008 JP
2008-287047 07.11.2008 JP
Title (EN) ALUMINUM NITRIDE SUBSTRATE WITH OXIDE LAYER, ALUMINUM NITRIDE SINTERED COMPACT, PROCESSES FOR PRODUCING THE ALUMINUM NITRIDE SUBSTRATE AND THE ALUMINUM NITRIDE SINTERED COMPACT, CIRCUIT BOARD, AND LED MODULE
(FR) SUBSTRAT EN NITRURE D'ALUMINIUM POURVU D'UNE COUCHE D'OXYDE, COMPACT FRITTÉ EN NITRURE D'ALUMINIUM, PROCÉDÉS DE PRODUCTION DU SUBSTRAT EN NITRURE D'ALUMINIUM ET DU COMPACT FRITTÉ EN NITRURE D'ALUMINIUM, CARTE DE CIRCUIT, ET MODULE À LED
(JA) 酸化層を有する窒化アルミニウム基板、窒化アルミニウム焼結体、それらの製造方法、回路基板、及びLEDモジュール
Abstract: front page image
(EN)Disclosed is an aluminum nitride substrate comprising an aluminum nitride sintered compact and an oxide layer having a high adhesive strength provided on a surface of the aluminum nitride sintered compact. The aluminum nitride substrate comprises an oxide layer (3) and is characterized in that the oxide layer contains aluminum nitride crystal particles (4) and the thickness of a virtual layer formed of only aluminum oxide calculated based on the total content of the aluminum oxide component in the oxide layer is 5 to 100 &mgr;m.
(FR)Le substrat en nitrure d'aluminium ci-décrit comprend un compact fritté en nitrure d'aluminium et une couche d'oxyde ayant une force d'adhérence élevée fournie sur une surface du compact fritté en nitrure d'aluminium. Le substrat en nitrure d'aluminium comprend une couche d'oxyde (3) et est caractérisé en ce que la couche d'oxyde contient des particules cristallines en nitrure d'aluminium (4) et en ce que l'épaisseur d'une couche virtuelle formée  uniquement d'oxyde d'aluminium, calculée sur la base de la teneur totale du composant oxyde d'aluminium dans la couche d'oxyde, est de 5 à 100 µm.
(JA) 窒化アルミニウム焼結体の表面に、高い密着強度を有する酸化層が形成された窒化アルミニウム基板を提供することを目的とする。酸化層3を有する窒化アルミニウム基板であって、前記酸化層は窒化アルミニウム結晶粒子4を含有し、前記酸化層中の酸化アルミニウム成分の総含有量に基づいて、酸化アルミニウムのみからなる仮想の層の厚みを算出したときの厚みが5~100μmになることを特徴とする。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)