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Pub. No.:    WO/2009/118979    International Application No.:    PCT/JP2009/000379
Publication Date: 01.10.2009 International Filing Date: 02.02.2009
H01L 33/00 (2010.01), H01L 21/205 (2006.01), H01S 5/323 (2006.01)
Applicants: PANASONIC CORPORATION [JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka, 5718501 (JP) (For All Designated States Except US).
TAKIZAWA, Toshiyuki; (For US Only).
UEDA, Tetsuzo; (For US Only).
USUDA, Manabu; (For US Only)
Inventors: TAKIZAWA, Toshiyuki; .
UEDA, Tetsuzo; .
USUDA, Manabu;
Agent: MAEDA, Hiroshi; Osaka-Marubeni Bldg., 5-7, Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka, 5410053 (JP)
Priority Data:
2008-087975 28.03.2008 JP
(JA) 窒化物半導体発光装置
Abstract: front page image
(EN)Disclosed is a nitride semiconductor light-emitting device comprising a substrate (101) composed of silicon; a mask film (102) composed of silicon oxide, which film is formed on a major surface of the substrate (101) and has at least one opening (102a); a seed layer (104) composed of GaN and selectively formed on the substrate (101) in the opening (102a); an LEG layer (105) formed on the lateral surface of the seed layer (104); and an n-type GaN layer (106) including an active layer (107) and a p-type GaN layer (108) formed on the LEG layer (105). In this connection, the LEG layer is formed by crystal growth using an organic nitrogen material as a nitrogen source.
(FR)L'invention porte sur un dispositif électroluminescent à semi-conducteur au nitrure comprenant un substrat (101) composé de silicium ; un film de masque (102) composé d'oxyde de silicium, lequel film est formé sur une surface principale du substrat (101) et comporte au moins une ouverture (102a) ; une couche de germe (104) composée de GaN et sélectivement formée sur le substrat (101) dans l'ouverture (102a) ; une couche LEG (105) formée sur la surface latérale de la couche de germe (104) ; et une couche GaN de type n (106) comprenant une couche active (107) et une couche GaN de type p (108) formée sur la couche LEG (105). A cet égard, la couche LEG est formée par croissance cristalline en utilisant un matériau azoté organique en tant que source d'azote.
(JA) シリコンからなる基板(101)と、基板(101)の主面上に形成され、少なくとも1つの開口部(102a)を有する酸化シリコンからなるマスク膜(102)と、基板(101)における開口部(102a)の上に選択的に形成されたGaNからなるシード層(104)と、シード層(104)の側面に形成されたLEG層(105)と、LEG層(105)の上に形成され、活性層(107)を含むn型GaN層(106)及びp型GaN層(108)とを有している。ここで、LEG層(105)は、窒素源に有機窒素原料を用いた結晶成長により形成されている。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)