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1. (WO2009110119) FERROMAGNETIC TUNNEL JUNCTION ELEMENT AND DRIVING METHOD OF FERROMAGNETIC TUNNEL JUNCTION ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2009/110119 International Application No.: PCT/JP2008/065412
Publication Date: 11.09.2009 International Filing Date: 28.08.2008
IPC:
H01L 43/08 (2006.01) ,G11B 5/39 (2006.01) ,H01F 10/32 (2006.01) ,H01L 21/8246 (2006.01) ,H01L 27/105 (2006.01) ,H01L 43/10 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127
Structure or manufacture of heads, e.g. inductive
33
Structure or manufacture of flux-sensitive heads
39
using magneto-resistive devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
F
MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10
Thin magnetic films, e.g. of one-domain structure
32
Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8246
Read-only memory structures (ROM)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
Applicants:
小野 拓也 ONO, Takuya; null (UsOnly)
富士電機ホールディングス株式会社 Fuji Electric Holdings Co., Ltd. [JP/JP]; 〒2100856 神奈川県川崎市川崎区田辺新田1番1号 Kanagawa 1-1, Tanabeshinden, Kawasaki-ku, Kawasaki-shi, Kanagawa 2100856, JP (AllExceptUS)
Inventors:
小野 拓也 ONO, Takuya; null
Agent:
奥山 尚一 OKUYAMA, Shoichi; 〒1070052 東京都港区赤坂3丁目2番12号赤坂ノアビル8階 Tokyo 8th Floor, Akasaka NOA Bldg. 2-12, Akasaka 3-chome Minato-ku, Tokyo 1070052, JP
Priority Data:
2008-05617606.03.2008JP
Title (EN) FERROMAGNETIC TUNNEL JUNCTION ELEMENT AND DRIVING METHOD OF FERROMAGNETIC TUNNEL JUNCTION ELEMENT
(FR) ÉLÉMENT DE JONCTION À EFFET TUNNEL FERROMAGNÉTIQUE ET PROCÉDÉ DE PILOTAGE D'ÉLÉMENT DE JONCTION À EFFET TUNNEL FERROMAGNÉTIQUE
(JA) 強磁性トンネル接合素子および強磁性トンネル接合素子の駆動方法
Abstract:
(EN) A tunnel junction element having a ferromagnetic free layer, an insulating film and a ferromagnetic fixed layer for reducing current required for effecting a spin-injection magnetization reversal behavior in the tunnel junction element, wherein the ferromagnetic free layer includes a first and second ferromagnetic layers, between which a nonmagnetic metal layer is provided, the nonmagnetic metal layer being capable of keeping magnetic linkage between the first and second ferromagnetic layers and affecting no influence over crystal growth of the respective first and second ferromagnetic layers, and the first and second ferromagnetic layers are characterized in that the first ferromagnetic layer is disposed so as to come into contact with the insulating layer, and the second ferromagnetic layer is less magnetized than the first ferromagnetic layer.
(FR) L'invention porte sur un élément de jonction à effet de tunnel comprenant une couche ferromagnétique libre, un film isolant et une couche ferromagnétique fixe pour réduire le courant requis pour obtenir un comportement d'inversion d'aimantation par injection de spin dans l'élément de jonction à effet de tunnel. La couche ferromagnétique libre comprend des première et seconde couches ferromagnétiques, entre lesquelles est installée une couche métallique non magnétique apte à maintenir un couplage magnétique entre les première et seconde couches ferromagnétiques et n'ayant aucune influence sur la croissance cristalline des première et seconde couches ferromagnétiques respectives. Les première et seconde couches ferromagnétiques sont caractérisées en ce que la première couche ferromagnétique est agencée de façon à entrer en contact avec la couche isolante. La seconde couche ferromagnétique est moins aimantée que la première couche ferromagnétique.
(JA)  トンネル接合素子においてスピン注入磁化反転動作に必要な電流を低減するために、強磁性自由層と絶縁層と強磁性固定層を持つトンネル接合素子において、強磁性自由層が第1および第2の強磁性層を含み、該強磁性層の間に非磁性金属層が設けられ、該非磁性金属層は、第1および第2の強磁性層の間の磁気的結合を保つようにされることができ、また、第1および第2の強磁性層それぞれの結晶成長に影響しないようにされることができ、そして、第1の強磁性層と第2の強磁性層は、第1の強磁性層が前記絶縁層に接するように配置され、第2の強磁性層は第1の強磁性層より小さな磁化を有する。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)