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1. (WO2009110119) FERROMAGNETIC TUNNEL JUNCTION ELEMENT AND DRIVING METHOD OF FERROMAGNETIC TUNNEL JUNCTION ELEMENT

Pub. No.:    WO/2009/110119    International Application No.:    PCT/JP2008/065412
Publication Date: Sat Sep 12 01:59:59 CEST 2009 International Filing Date: Fri Aug 29 01:59:59 CEST 2008
IPC: H01L 43/08
G11B 5/39
H01F 10/32
H01L 21/8246
H01L 27/105
H01L 43/10
Applicants: Fuji Electric Holdings Co., Ltd.
富士電機ホールディングス株式会社
ONO, Takuya
小野 拓也
Inventors: ONO, Takuya
小野 拓也
Title: FERROMAGNETIC TUNNEL JUNCTION ELEMENT AND DRIVING METHOD OF FERROMAGNETIC TUNNEL JUNCTION ELEMENT
Abstract:
A tunnel junction element having a ferromagnetic free layer, an insulating film and a ferromagnetic fixed layer for reducing current required for effecting a spin-injection magnetization reversal behavior in the tunnel junction element, wherein the ferromagnetic free layer includes a first and second ferromagnetic layers, between which a nonmagnetic metal layer is provided, the nonmagnetic metal layer being capable of keeping magnetic linkage between the first and second ferromagnetic layers and affecting no influence over crystal growth of the respective first and second ferromagnetic layers, and the first and second ferromagnetic layers are characterized in that the first ferromagnetic layer is disposed so as to come into contact with the insulating layer, and the second ferromagnetic layer is less magnetized than the first ferromagnetic layer.