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1. (WO2009094009) LARGE AREA NANOPATTERNING METHOD AND APPARATUS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2009/094009 International Application No.: PCT/US2008/012901
Publication Date: 30.07.2009 International Filing Date: 18.11.2008
IPC:
H01L 21/027 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
Applicants:
ROLITH, INC. [US/US]; 4292 Keegan Street Dublin, CA 94568, US (AllExceptUS)
KOBRIN, Boris; US (UsOnly)
LANDAU, Igor; US (UsOnly)
VOLF, Boris; US (UsOnly)
Inventors:
KOBRIN, Boris; US
LANDAU, Igor; US
VOLF, Boris; US
Agent:
ROLITH, INC.; c/o Boris Kobrin, Ph.D. 4292 Keegan St. Dublin, CA 94568, US
Priority Data:
61/011,86122.01.2008US
Title (EN) LARGE AREA NANOPATTERNING METHOD AND APPARATUS
(FR) PROCÉDÉ ET APPAREIL DE FORMATION DE NANOMOTIF DE GRANDE SUPERFICIE
Abstract:
(EN) Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of large area substrates, where a rotatable mask is used to image a radiation- sensitive material. Typically the rotatable mask comprises a cylinder. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the substrate is in dynamic contact with the substrate. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating cylinder surface comprises metal nano holes or nanoparticles.
(FR) L'invention concerne des procédés et un appareil utiles dans la formation de nanomotif sur des substrats de grande superficie, un masque rotatif étant utilisé pour imager un matériau sensible au rayonnement. Typiquement, le masque rotatif comprend un cylindre. La technique de formation de nanomotif utilise la photolithographie en champ proche, le masque utilisé pour former des motifs sur le substrat étant en contact dynamique avec le substrat. La photolithographie en champ proche peut utiliser un masque de déphasage élastomère, ou peut employer la technologie du plasmon de surface, une surface de cylindre rotative comprenant des nanotrous ou des nanoparticules en métal.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2238608MXMX/a/2010/007954JP2011526069RU2010134893CN101911249RU0002488188
CA2709718MX2010007954KR1020110008159CN105171985AU2008348353IN1256/MUMNP/2010