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Machine translation
1. (WO2009066848) DYE-SENSITIZED SOLAR CELLS HAVING SUBSTRATE INCLUDING P-N JUNCTION DIODE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/066848    International Application No.:    PCT/KR2008/003687
Publication Date: 28.05.2009 International Filing Date: 26.06.2008
IPC:
H01L 31/04 (2006.01)
Applicants: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE [KR/KR]; 161, Gajeong-dong, Yusong-gu, Daejeon-city 305-350 (KR) (For All Designated States Except US).
JUN, Yong-Seok [KR/KR]; (KR) (For US Only).
LEE, Seung-Yup [KR/KR]; (KR) (For US Only).
YUN, Ho-Gyeong [KR/KR]; (KR) (For US Only).
KANG, Man-Gu [KR/KR]; (KR) (For US Only).
KIM, Jong-Dae [KR/KR]; (KR) (For US Only)
Inventors: JUN, Yong-Seok; (KR).
LEE, Seung-Yup; (KR).
YUN, Ho-Gyeong; (KR).
KANG, Man-Gu; (KR).
KIM, Jong-Dae; (KR)
Agent: Y.P.LEE, MOCK & PARTNERS; 1575-1, Seocho-dong, Seocho-gu, Seoul 137-875 (KR)
Priority Data:
10-2007-0119319 21.11.2007 KR
Title (EN) DYE-SENSITIZED SOLAR CELLS HAVING SUBSTRATE INCLUDING P-N JUNCTION DIODE
(FR) CELLULES SOLAIRES SENSIBILISÉES PAR COLORANT COMPORTANT UN SUBSTRAT COMPRENANT UNE DIODE À JONCTION P-N
Abstract: front page image
(EN)Provided is a dye-sensitized solar cell that uses a tandem structure having a p-n junction diode. The dye-sensitized solar cell includes a semiconductor electrode formed on a first conductive substrate, a facing electrode formed on a second conductive substrate, and an electrolyte layer interposed between the semiconductor electrode and the facing electrode. One of the first conductive substrate and the second conductive substrate includes a p-n junction diode.
(FR)L'invention concerne une cellule solaire sensibilisée par colorant qui utilise une structure en tandem comportant une diode à jonction p-n. La cellule solaire sensibilisée par colorant comprend une électrode semi-conductrice formée sur un premier substrat conducteur, une électrode opposée formée sur un second substrat conducteur et une couche d'électrolyte interposée entre l'électrode semi-conductrice et l'électrode opposée. L'un du premier substrat conducteur et du second substrat conducteur comprend une diode à jonction p-n.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)