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1. (WO2009066704) SOLDER MATERIAL, PROCESS FOR PRODUCING THE SOLDER MATERIAL, JOINT PRODUCT, PROCESS FOR PRODUCING THE JOINT PRODUCT, POWER SEMICONDUCTOR MODULE, AND PROCESS FOR PRODUCING THE POWER SEMICONDUCTOR MODULE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/066704    International Application No.:    PCT/JP2008/071043
Publication Date: 28.05.2009 International Filing Date: 19.11.2008
IPC:
B23K 35/14 (2006.01), B23K 35/28 (2006.01), B23K 35/40 (2006.01), C22C 18/04 (2006.01), H01L 23/36 (2006.01), H01L 25/07 (2006.01), H01L 25/18 (2006.01)
Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA [JP/JP]; 1, Toyota-cho, Toyota-shi, Aichi 4718571 (JP) (For All Designated States Except US).
TOHOKU UNIVERSITY [JP/JP]; 1-1, Katahira 2-chome, Aoba-ku, Sendai-shi, Miyagi 9808577 (JP) (For All Designated States Except US).
YAMADA, Yasushi [JP/JP]; (JP) (For US Only).
YAGI, Yuji [JP/JP]; (JP) (For US Only).
TAKAKU, Yoshikazu [JP/JP]; (JP) (For US Only).
OHNUMA, Ikuo [JP/JP]; (JP) (For US Only).
ISHIDA, Kiyohito [JP/JP]; (JP) (For US Only).
ATSUMI, Takashi [JP/JP]; (JP) (For US Only).
NAKAGAWA, Ikuo [JP/JP]; (JP) (For US Only).
SHIRAI, Mikio [JP/JP]; (JP) (For US Only)
Inventors: YAMADA, Yasushi; (JP).
YAGI, Yuji; (JP).
TAKAKU, Yoshikazu; (JP).
OHNUMA, Ikuo; (JP).
ISHIDA, Kiyohito; (JP).
ATSUMI, Takashi; (JP).
NAKAGAWA, Ikuo; (JP).
SHIRAI, Mikio; (JP)
Agent: NAKAJIMA, Jun; TAIYO, NAKAJIMA & KATO Seventh Floor, HK-Shinjuku Bldg. 3-17, Shinjuku 4-chome Shinjuku-ku, Tokyo 1600022 (JP)
Priority Data:
2007-300792 20.11.2007 JP
Title (EN) SOLDER MATERIAL, PROCESS FOR PRODUCING THE SOLDER MATERIAL, JOINT PRODUCT, PROCESS FOR PRODUCING THE JOINT PRODUCT, POWER SEMICONDUCTOR MODULE, AND PROCESS FOR PRODUCING THE POWER SEMICONDUCTOR MODULE
(FR) MATÉRIAU DE BRASAGE, PRODUIT DE JONCTION, MODULE SEMI-CONDUCTEUR DE PUISSANCE ET LEURS PROCESSUS DE PRODUCTION RESPECTIFS
(JA) はんだ材料及びその製造方法、接合体及びその製造方法、並びにパワー半導体モジュール及びその製造方法
Abstract: front page image
(EN)A zinc-base solder material (55) comprises a zinc-base material (50) and a covering layer (51) provided on a surface of the zinc-base material (50). The covering layer (51) is provided on the surface of the zinc-base material (50) after the removal of an oxide film (501) on the surface of the zinc-base material (50) or in such a state that the surface of the zinc-base material (50) is free from the oxide film (501). The covering layer (51) is composed mainly of a metal of which the oxide is reduced more easily than the oxide film (501). There are also provided a joint product and a power semiconductor module. In the joint product and the power semiconductor module, the zinc-base solder material (55) is used at a joint area thereof, and, upon joining, the covering layer (51) disappears.
(FR)La présente invention se rapporte à un matériau de brasage à base de zinc (55) comprenant un matériau à base de zinc (50) et une couche de revêtement (51) disposée sur une surface du matériau à base de zinc (50). La couche de revêtement (51) est disposée sur la surface du matériau à base de zinc (50) après le retrait d'un film d'oxyde (501) se trouvant sur la surface du matériau à base de zinc (50) ou dans un état tel que la surface du matériau à base de zinc (50) est dépourvue du film d'oxyde (501). La couche de revêtement (51) est principalement composée d'un métal dont l'oxyde est réduit plus facilement que le film d'oxyde (501). Un produit de jonction et un module semi-conducteur de puissance sont également prévus. Dans le produit de jonction et le module semi-conducteur de puissance, le matériau de brasage à base de zinc (55) est utilisé dans leur zone de jonction, et, lors de la jonction, la couche de revêtement (51) disparaît.
(JA) 本発明の亜鉛系はんだ材料55は、亜鉛系材料50における表面の酸化膜501を除去した後に、又は表面に酸化膜501が存在しない状態で、前記酸化膜501よりもその酸化物が還元され易い金属を主成分とする被覆層51を前記表面に設けてなる。また、本発明の接合体およびパワー半導体モジュールは、接合部に前記亜鉛系はんだ材料55が用いられ、接合後には前記被覆層51が消失している。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)