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Machine translation
1. (WO2009066059) ORGANIC THIN FILM TRANSISTORS, ACTIVE MATRIX ORGANIC OPTICAL DEVICES AND METHODS OF MAKING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/066059    International Application No.:    PCT/GB2008/003870
Publication Date: 28.05.2009 International Filing Date: 18.11.2008
IPC:
H01L 51/00 (2006.01)
Applicants: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED [GB/GB]; IP Department, Building 2020, Cambourne Business Park, Cambridgeshire Cambridgeshire CB23 6DW (GB) (For All Designated States Except US).
BALE, Mark [GB/GB]; (GB) (For US Only).
HATCHER, Michael [GB/GB]; (GB) (For US Only)
Inventors: BALE, Mark; (GB).
HATCHER, Michael; (GB)
Agent: KAY, Christoper; IP Department, Cambridge Display Technology Ltd, Building 2020 Cambourne Business Park, Cambridgeshire CB23 6DW (GB)
Priority Data:
0722750.7 20.11.2007 GB
Title (EN) ORGANIC THIN FILM TRANSISTORS, ACTIVE MATRIX ORGANIC OPTICAL DEVICES AND METHODS OF MAKING THE SAME
(FR) TRANSISTORS À FILM MINCE ORGANIQUE, DISPOSITIFS OPTIQUES ORGANIQUES À MATRICE ACTIVE ET PROCÉDÉ POUR LEUR FABRICATION
Abstract: front page image
(EN)A method of manufacturing an organic thin film transistor, comprising: providing a substrate comprising source and drain electrodes defining a channel region; forming a patterned layer of insulting material defining a well surrounding the channel region; depositing a protective layer in the well; subjecting exposed portions of the patterned layer of insulating material to a de-wetting treatment to lower the wettability of the exposed portions; removing the protective layer; and depositing organic semiconductive material from solution into the well.
(FR)L'invention concerne un procédé de fabrication d'un transistor à film mince organique, qui comprend les étapes qui consistent à : prévoir un substrat comprenant une électrode de source et une électrode de drain qui définissent une région de canal, former une couche structurée de matériau isolant qui définit un puits qui entoure la région de canal, déposer une couche de protection dans le puits, faire subir aux parties exposées de la couche structurée de matériau isolant un traitement de démouillage pour abaisser la mouillabilité des parties exposées, retirer la couche de protection et déposer dans le puits un matériau semi-conducteur organique en solution.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)