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Machine translation
1. (WO2009064867) PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/064867    International Application No.:    PCT/US2008/083382
Publication Date: 22.05.2009 International Filing Date: 13.11.2008
IPC:
H01L 21/26 (2006.01), H01L 31/042 (2006.01), H01L 29/786 (2006.01)
Applicants: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. [US/US]; 35 Dory Road, Gloucester, MA 01930 (US) (For All Designated States Except US).
ENGLAND, Jonathan, Gerald [GB/GB]; (GB) (For US Only).
SINCLAIR, Frank [US/US]; (US) (For US Only).
KOO, John (bon Woong) [US/US]; (US) (For US Only).
DORAI, Rajesh [US/US]; (US) (For US Only).
GODET, Ludovic [FR/US]; (US) (For US Only)
Inventors: ENGLAND, Jonathan, Gerald; (GB).
SINCLAIR, Frank; (US).
KOO, John (bon Woong); (US).
DORAI, Rajesh; (US).
GODET, Ludovic; (US)
Agent: CHOI, Changhoon; Varian Semiconductor Equipment Associates, Inc., 35 Dory Road, Gloucester, MA 01930 (US)
Priority Data:
60/987,629 13.11.2007 US
60/987,667 13.11.2007 US
60/987,650 13.11.2007 US
12/269,327 12.11.2008 US
Title (EN) PARTICLE BEAM ASSISTED MODIFICATION OF THIN FILM MATERIALS
(FR) MODIFICATION DE MATÉRIAUX DE FILM MINCE ASSISTÉE PAR UN FAISCEAU DE PARTICULES
Abstract: front page image
(EN)Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include generating a continuous particle beam containing a plurality of particles; and introducing the continuous particle beam to a region of the substrate in an amorphous phase and transforming the region from the amorphous phase to a crystalline phase, wherein the continuous particle beam has a current density of 5 x 1014 particles/cm2sec or greater.
(FR)L'invention concerne plusieurs exemples d'un procédé pour traiter un substrat. Dans un mode de réalisation particulier, le procédé peut consister à générer un faisceau de particules continu contenant une pluralité de particules; et à introduire le faisceau de particules continu dans une région du substrat en phase amorphe et à faire passer cette région d'une phase amorphe à une phase cristalline, le faisceau de particules continu présentant une densité actuelle de 5 x 1014 particules/cm2sec ou plus.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)