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Machine translation
1. (WO2009061704) ATOMIC LAYER DEPOSITION ENCAPSULATION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/061704    International Application No.:    PCT/US2008/082295
Publication Date: 14.05.2009 International Filing Date: 03.11.2008
IPC:
H01L 21/205 (2006.01), H01L 33/44 (2010.01), H01L 33/56 (2010.01)
Applicants: HCF PARTNERS, L.P. [US/US]; 2001 Kirby Drive, Suite 1210, Houston, TX 77019-6081 (US) (For All Designated States Except US).
GOUGH, Neil [GB/US]; (US) (For US Only).
DAMERON, Arrelaine [US/US]; (US) (For US Only)
Inventors: GOUGH, Neil; (US).
DAMERON, Arrelaine; (US)
Agent: CHA, Don, D.; 547 Buena Vista Road, Golden, CO 80401 (US)
Priority Data:
60/985,936 06.11.2007 US
Title (EN) ATOMIC LAYER DEPOSITION ENCAPSULATION
(FR) ENCAPSULATION PAR DÉPÔT D'UNE COUCHE ATOMIQUE
Abstract: front page image
(EN)The invention provides devices that are conformally encapsulated using ALD and methods for producing the same.
(FR)L'invention concerne des dispositifs qui sont encapsulés de manière conforme en utilisant un dépôt de couche atomique (ALD) et des procédés pour produire ceux-ci.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)