WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2009061108) SPIN TRANSISTOR AND METHOD OF OPERATING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/061108    International Application No.:    PCT/KR2008/006477
Publication Date: 14.05.2009 International Filing Date: 04.11.2008
Chapter 2 Demand Filed:    29.07.2009    
IPC:
H01L 29/78 (2006.01), H01L 29/80 (2006.01), H01L 29/00 (2006.01)
Applicants: SAMSUNG ELECTRONICS CO., LTD. [KR/KR]; 416, Maetan-dong, Yeongtong-gu Suwon-si Gyeonggi-do 442-742 (KR) (For All Designated States Except US).
HONG, Ki-Ha [KR/KR]; (KR) (For US Only).
LEE, Sung-Hoon [KR/KR]; (KR) (For US Only).
KIM, Jong-Seob [KR/KR]; (KR) (For US Only).
SHIN, Jai-Kwang [KR/KR]; (KR) (For US Only)
Inventors: HONG, Ki-Ha; (KR).
LEE, Sung-Hoon; (KR).
KIM, Jong-Seob; (KR).
SHIN, Jai-Kwang; (KR)
Agent: Y.P.LEE, MOCK & PARTNERS; The Koryo Building, 1575-1 Seocho-dong, Seocho-gu Seoul 137-875 (KR)
Priority Data:
10-2007-0114192 09.11.2007 KR
10-2008-0096725 01.10.2008 KR
Title (EN) SPIN TRANSISTOR AND METHOD OF OPERATING THE SAME
(FR) TRANSISTOR À SPIN ET SON PROCÉDÉ D'UTILISATION
Abstract: front page image
(EN)Disclosed are a spin transistor and a method of operating the spin transistor. The disclosed spin transistor includes a channel formed of a magnetic material selectively passing a spin-polarized electron having a specific direction, a source formed of a magnetic material, a drain, and a gate electrode. When a predetermined voltage is applied to the gate electrode, the channel selectively passes a spin-polarized electron having a specific direction and thus, the spin transistor is selectively turned on.
(FR)Transistor à spin et son procédé d'utilisation. Le transistor de l'invention comprend un canal formé d'un matériau magnétique qui laisse passer sélectivement un électron polarisé de spin ayant une direction spécifique, une source formée d'un matériau magnétique, un drain et une électrode de grille. Lorsqu'une tension prédéterminée est appliquée à l'électrode de grille, le canal laisse passer sélectivement un électron polarisé de spin ayant une direction spécifique, ce qui enclenche sélectivement le transistor.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)