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Machine translation
1. (WO2009060914) EPITAXIAL WAFER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/060914    International Application No.:    PCT/JP2008/070237
Publication Date: 14.05.2009 International Filing Date: 06.11.2008
IPC:
C23C 16/24 (2006.01), C23C 16/458 (2006.01), H01L 21/205 (2006.01)
Applicants: SUMCO CORPORATION [JP/JP]; 2-1, Shibaura 1-chome, Minato-ku, Tokyo 1058634 (JP) (For All Designated States Except US).
TAKAISHI, Kazushige [JP/JP]; (JP) (For US Only).
MIURA, Tomonori [JP/JP]; (JP) (For US Only)
Inventors: TAKAISHI, Kazushige; (JP).
MIURA, Tomonori; (JP)
Agent: ABE, Itsurou; ABE International Patent Office Complete Sakaimachi bldg. 403 9-6, Sakaimachi 1-chome, Kokurakita-ku Kitakyushu-city, Fukuoka 8020005 (JP)
Priority Data:
2007-291340 08.11.2007 JP
Title (EN) EPITAXIAL WAFER
(FR) PLAQUETTE ÉPITAXIALE
(JA) エピタキシャルウェーハ
Abstract: front page image
(EN)Provided is an epitaxial wafer by which particles generated in a device process due to scratches in a boundary region between the rear surface and a chamfered surface are eliminated. Since there is no scratch in the boundary region between the rear surface and the chamfered surface, particles that generate from the scratch are also reduced when the wafer is immersed in an etching solution in the device process. As a result, device yield is improved.
(FR)L'invention concerne une plaquette épitaxiale à l'aide de laquelle la génération de particules lors d'un traitement de dispositif du fait de rayures dans une zone de limite entre la surface arrière et une surface chanfreinée est éliminée. Etant donné qu'il n'existe pas de rayure au niveau de la zone de limite entre la surface arrière et la surface chanfreinée, la génération de particules à partir de la rayure est également réduite lorsque la plaquette est immergée dans une solution d'attaque chimique lors du traitement de dispositif. Ainsi, le rendement du dispositif est amélioré.
(JA) 裏面と面取り面との境界領域の傷によるデバイス工程でのパーティクルをなくせるエピタキシャルウェーハを提供する。裏面と面取り面との境界領域に傷が少ないので、デバイス工程でのエッチング液浸漬時、傷から生じたパーティクルも低減する。その結果、デバイスの歩留まりが高まる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)