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Pub. No.:    WO/2009/060561    International Application No.:    PCT/JP2008/002910
Publication Date: 14.05.2009 International Filing Date: 15.10.2008
C30B 23/06 (2006.01), C30B 29/36 (2006.01)
Applicants: PANASONIC CORPORATION [JP/JP]; 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501 (JP) (For All Designated States Except US).
TOTTORI, Satoru; (For US Only).
HOSHIKAWA, Hiroaki; (For US Only)
Inventors: TOTTORI, Satoru; .
Agent: HARADA, Yohei; OX Nishihonmachi Bldg. 4th Floor 10-10, Nishi-Hommachi 1-chome, Nishi-ku, Osaka-shi Osaka 5500005 (JP)
Priority Data:
2007-290325 08.11.2007 JP
(JA) 単結晶成長装置
Abstract: front page image
(EN)This invention provides a single crystal growing apparatus characterized in that a cylindrical guide member (6) comprising an internal passage narrowed from a raw material (3) side toward a seed crystal (5) side is provided, and, in the guide member (6), a second cylindrical member (8) is disposed through a heat insulating layer (23) on the inner side of a first cylindrical member (7). In the apparatus, a high-quality single crystal of silicon carbide can be grown even in crystal growth for a long period of time by keeping the inner wall temperature (Tg2) of the second cylindrical member (8) during the crystal growth above the surface temperature (Tc) of a single crystal (9) of silicon carbide.
(FR)Cette invention concerne un appareil permettant la croissance de monocristaux qui est caractérisé en ce qu'un élément de guidage cylindrique (6) qui comprend un passage interne qui se rétrécit d'un côté matériau brut (3) à un côté germe cristallin (5) germe est monté et, en ce que dans l'élément de guidage (6), un second élément cylindrique (8) est disposé à travers une couche thermoisolante (23) sur la face interne d'un premier élément cylindrique (7). Dans l'appareil, un monocristal haute qualité de carbure de silicium peut être développé, même lors d'une croissance cristalline longue, en gardant, pendant la croissance de cristaux, la température de paroi interne (Tg2) du second élément cylindrique (8) supérieure à la température de surface (Tc) d'un monocristal (9) de carbure de silicium.
(JA) 原料(3)の側から種結晶(5)の側に向かって内部通路が細くなる筒状のガイド部材(6)を配設すると共に、ガイド部材(6)を、第1の筒状部材(7)の内側に第2の筒状部材(8)を断熱層(23)を介して配置したことを特徴とし、結晶成長時の第2の筒状部材(8)の内壁温度Tg2を、炭化珪素単結晶(9)の表面温度Tcよりも高温に保つことによって、長時間の結晶成長を行っても、高品質な炭化珪素単結晶を成長できる。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)