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Machine translation
1. (WO2009060190) CONFIGURABLE ELECTRONIC DEVICE AND METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/060190    International Application No.:    PCT/GB2008/003735
Publication Date: 14.05.2009 International Filing Date: 06.11.2008
IPC:
H01L 27/02 (2006.01), H01L 27/07 (2006.01), H01L 27/088 (2006.01), H03K 17/14 (2006.01), H03K 17/16 (2006.01), H03K 19/003 (2006.01)
Applicants: UNIVERSITY OF SOUTHAMPTON [GB/GB]; Highfield, Southampton SO17 1BJ (GB) (For All Designated States Except US).
WILSON, Peter, Reid [GB/GB]; (GB) (For US Only).
WILCOCK, Reuben [GB/GB]; (GB) (For US Only)
Inventors: WILSON, Peter, Reid; (GB).
WILCOCK, Reuben; (GB)
Agent: GRANLEESE, Rhian, Jane; Marks & Clerk LLP, 90 Long Acre, London WC2E 9RA (GB)
Priority Data:
0721752.4 06.11.2007 GB
Title (EN) CONFIGURABLE ELECTRONIC DEVICE AND METHOD
(FR) DISPOSITIF ÉLECTRONIQUE CONFIGURABLE ET PROCÉDÉ
Abstract: front page image
(EN)A configurable transistor device (1, 3) comprising a primary transistor (5) and at least one secondary transistors (7, 9, 11), said primary transistor and said secondary transistors having their drain electrodes connected to a common drain electrode (D) and their source electrodes connected to a common source electrode (S), said primary transistor having its gate electrode connected to a common gate electrode (G) and each of said secondary transistors having their gate electrodes switchably (Bl, B2, B3) connected to said common gate electrode (G), the gate widths of said secondary transistors being shorter than the gate width of said primary transistor.
(FR)L'invention porte sur un dispositif à transistors configurable. Le dispositif comporte un transistor primaire et au moins un transistor secondaire dont les électrodes de drain sont connectées à une électrode de drain commune et dont les électrodes de source sont connectées à une électrode de source commune. L'électrode de grille du transistor primaire est connectée à une électrode de grille commune; l'électrode de grille de chacun des transistors secondaires est connectée de façon commutable à l'électrode de grille commune. Les largeurs de grille des transistors secondaires sont inférieures à la largeur de grille du transistor primaire.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)