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1. (WO2009058463) COMPOSITION, METHOD AND PROCESS FOR POLISHING A WAFER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/058463    International Application No.:    PCT/US2008/074199
Publication Date: 07.05.2009 International Filing Date: 25.08.2008
Chapter 2 Demand Filed:    26.08.2009    
IPC:
C09K 3/14 (2006.01), C09G 1/02 (2006.01), H01L 21/302 (2006.01)
Applicants: 3M INNOVATIVE PROPERTIES COMPANY [US/US]; 3M Center Post Office Box 33427 Saint Paul, Minnesota 55133-3427 (US) (For All Designated States Except US).
LI, Naichao [CN/US]; (US) (For US Only).
GAGLIARDI, John J. [US/US]; (US) (For US Only).
CLARK, Philip G. [US/US]; (US) (For US Only).
SAVU, Patricia M. [US/US]; (US) (For US Only)
Inventors: LI, Naichao; (US).
GAGLIARDI, John J.; (US).
CLARK, Philip G.; (US).
SAVU, Patricia M.; (US)
Agent: BAKER, James A.; 3M Center, Office of Intellectual Property Counsel, Post Office Box 33427, Saint Paul, Minnesota 55133-3427 (US).
CHANG, Soo Kil; KIM & CHANG Seyang B/D, 223 Naeja-dong, Jongno-gu Seoul 110-720 (KR)
Priority Data:
60/984,217 31.10.2007 US
Title (EN) COMPOSITION, METHOD AND PROCESS FOR POLISHING A WAFER
(FR) COMPOSITION, MÉTHODE ET PROCÉDÉ DE POLISSAGE D'UNE GALETTE
Abstract: front page image
(EN)A composition for use in polishing a wafer is disclosed. The composition includes an aqueous solution of initial components substantially free of loose abrasive particles and having a pH in the range of about 2 to 7, the aqueous solution including at least one polyelectrolyte and a surfactant. In certain embodiments, the wafer polishing composition can be adjusted to control cut rate and selectivity for modifying semiconductor wafers using a fixed abrasive Chemical Mechanical Polishing (CMP) process. Also disclosed is a CMP method and a process for polishing a wafer using the polishing composition.
(FR)L'invention concerne une composition destinée à être utilisée dans le polissage d'une galette. La composition contient une solution aqueuse de composants initiaux essentiellement exempts de particules abrasives lâches et dont le pH est compris dans la plage d'environ 2 à 7, la solution aqueuse contenant au moins un polyélectrolyte et un agent tensioactif. Dans certains modes de réalisation, la composition de polissage de galette peut être ajustée de manière à contrôler le taux de coupe et la sélectivité en vue de modifier des galettes de semi-conducteur en utilisant une opération chimico-mécanique de polissage (CMP) avec abrasif fixe. L'invention concerne également une méthode CMP et un procédé de polissage d'une galette utilisant la composition de polissage.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)