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Machine translation
1. (WO2009057885) A THIN FILM TYPE VARISTOR AND A METHOD OF MANUFACTURING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/057885    International Application No.:    PCT/KR2008/004853
Publication Date: 07.05.2009 International Filing Date: 20.08.2008
IPC:
H01C 7/10 (2006.01)
Applicants: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE [KR/KR]; 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350 (KR) (For All Designated States Except US).
LIM, Jung Wook [KR/KR]; (KR) (For US Only).
KIM, Jun Kwan [KR/KR]; (KR) (For US Only).
YUN, Sun Jin [KR/KR]; (KR) (For US Only).
KIM, Hyun Tak [KR/KR]; (KR) (For US Only)
Inventors: LIM, Jung Wook; (KR).
KIM, Jun Kwan; (KR).
YUN, Sun Jin; (KR).
KIM, Hyun Tak; (KR)
Agent: C & S LOGOS PATENT AND LAW OFFICE; 13th Floor, Seocho-Pyunghwa Building, 1451-34 Seocho-dong, Seocho-gu, Seoul 137-070 (KR)
Priority Data:
10-2007-0110152 31.10.2007 KR
10-2008-0023827 14.03.2008 KR
Title (EN) A THIN FILM TYPE VARISTOR AND A METHOD OF MANUFACTURING THE SAME
(FR) VARISTOR DU TYPE À FILM MINCE ET SON PROCÉDÉ DE FABRICATION
Abstract: front page image
(EN)A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.
(FR)L'invention concerne un varistor du type à film mince et son procédé de fabrication. Ledit procédé consiste notamment : à déposer un premier film mince d'oxyde de zinc à basse température par un procédé de pulvérisation; et à former un flim mince d'oxyde de zinc pour varistor par traitement thermique à basse température du premier film mince d'oxyde de zinc dans un milieu où on a injecté un gaz inerte et de l'oxygène. En conséquence, il est possible d'abaisser une température de traitement et simplifier un processus de fabrication tout en conservant une caractéristique du varistor en vue de l'appliquer à un circuit hautement intégré.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)