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1. (WO2009057655) SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2009/057655    International Application No.:    PCT/JP2008/069682
Publication Date: 07.05.2009 International Filing Date: 29.10.2008
IPC:
H01L 33/44 (2010.01)
Applicants: Mitsubishi Chemical Corporation [JP/JP]; 14-1, Shiba 4-chome, Minato-ku, Tokyo 1080014 (JP) (For All Designated States Except US).
HORIE, Hideyoshi [JP/JP]; (JP) (For US Only).
HIRASAWA, Hirohiko [JP/JP]; (JP) (For US Only)
Inventors: HORIE, Hideyoshi; (JP).
HIRASAWA, Hirohiko; (JP)
Agent: ITO, Katsuhiro; 7F, TS Bldg., 3-10-9, Nihombashi-Kayabacho, Chuo-ku, Tokyo 1030025 (JP)
Priority Data:
2007-280229 29.10.2007 JP
Title (EN) SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME
(FR) ÉLÉMENT ÉLECTROLUMINESCENT SEMI-CONDUCTEUR ET PROCÉDÉ POUR SA FABRICATION
(JA) 半導体発光素子およびその製造方法
Abstract: front page image
(EN)A light emitting element (10) is provided with a thin film crystal layer which includes a buffer layer (22), a first conductivity type semiconductor layer, an active structure (25) and a second conductivity type semiconductor layer. In the thin film crystal layer, at least a part of the second conductivity type semiconductor layer is covered with an insulating film. The insulating film has a crystal quality improving layer (30) for recovering crystallinity of the thin film crystal layer.
(FR)L'invention concerne un élément électroluminescent (10) pourvu d'une couche de cristal en film mince comprenant une couche tampon (22), une couche semi-conductrice d'un premier type de conductivité, une structure active (25) et une couche semi-conductrice d'un deuxième type de conductivité. Dans la couche de cristal en film mince, au moins une partie de la couche semi-conductrice du deuxième type de conductivité est recouverte d'un film isolant. Le film isolant est doté d'une couche (30) améliorant la qualité du cristal, destinée à rétablir la cristallinité de la couche de cristal en film mince.
(JA) 発光素子10は、バッファ層22、第一導電型半導体層、活性構造25および第二導電型半導体層を含む薄膜結晶層を有している。薄膜結晶層は、少なくとも第二導電型半導体層の一部が絶縁膜で覆われている。絶縁膜は、薄膜結晶層の結晶性を回復させる結晶品質改善層30を有する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)