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1. WO2009051812 - VARIABLE THRESHOLD TRENCH IGBT WITH OFFSET EMITTER CONTACTS

Publication Number WO/2009/051812
Publication Date 23.04.2009
International Application No. PCT/US2008/011898
International Filing Date 17.10.2008
IPC
H01L 29/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
CPC
H01L 29/0839
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
08with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
083Anode or cathode regions of thyristors or gated bipolar-mode devices
0839Cathode regions of thyristors
H01L 29/1095
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
10with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
1095Body region, i.e. base region, of DMOS transistors or IGBTs
H01L 29/7397
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field-effect, ; e.g. bipolar static induction transistors [BSIT]
7393Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
7395Vertical transistors, e.g. vertical IGBT
7396with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
7397and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
Applicants
  • INTERNATIONAL RECTIFIER CORPORATION [US]/[US] (AllExceptUS)
  • NG, Chiu [CA]/[US] (UsOnly)
  • CHAO, Yuan Heng [CA]/[US] (UsOnly)
Inventors
  • NG, Chiu
  • CHAO, Yuan Heng
Agents
  • SALEHI, Kourosh
Priority Data
12/252,68416.10.2008US
60/999,24017.10.2007US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) VARIABLE THRESHOLD TRENCH IGBT WITH OFFSET EMITTER CONTACTS
(FR) TRANSISTOR BIPOLAIRE À GRILLE ISOLÉE À TRANCHÉE À SEUIL VARIABLE DOTÉ DE CONTACTS D'ÉMETTEUR DÉCALÉS
Abstract
(EN)
A trench type IGBT as disclosed herein includes a plurality of channel regions having one threshold voltage for the normal operation of the device and a plurality of channel regions having a threshold voltage higher than the threshold voltage for the normal operation of the device.
(FR)
La présente invention concerne un transistor bipolaire à grille isolée (IGBT) de type à tranchée comprenant une pluralité de zones de canaux ayant une tension de seuil en fonctionnement normal du dispositif et une pluralité de zones de canaux ayant une tension de seuil supérieure à la tension de seuil en fonctionnement normal du dispositif.
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