Processing

Please wait...

Settings

Settings

Goto Application

1. WO2009046239 - HIGH PERFORMANCE MOSFET

Publication Number WO/2009/046239
Publication Date 09.04.2009
International Application No. PCT/US2008/078652
International Filing Date 03.10.2008
IPC
H01L 21/8232 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
H01L 27/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
CPC
H01L 21/26586
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
265producing ion implantation
26586characterised by the angle between the ion beam and the crystal planes or the main crystal surface
H01L 29/66651
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66568Lateral single gate silicon transistors
66651with a single crystalline channel formed on the silicon substrate after insulating device isolation
H01L 29/7833
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7833with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Applicants
  • INTERNATIONAL BUSINESS MACHINES CORPORATION [US]/[US] (AllExceptUS)
  • ZHU, Huilong [US]/[US] (UsOnly)
  • WANG, Jing [CN]/[US] (UsOnly)
Inventors
  • ZHU, Huilong
  • WANG, Jing
Agents
  • ABATE, Joseph, P.
Priority Data
11/867,26604.10.2007US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) HIGH PERFORMANCE MOSFET
(FR) MOSFET À PERFORMANCES ÉLEVÉES
Abstract
(EN)
A semiconductor structure which exhibits high device performance and improved short channel effects is provided. In particular, the present invention provides a metal oxide semiconductor field effect transistor (MOFET) that includes a low dopant concentration within an inversion layer of the structure; the inversion layer is an epitaxial semiconductor layer that is formed atop a portion of the semiconductor substrate. The inventive structure also includes a well region of a first conductivity type beneath the inversion layer, wherein the well region has a central portion and two horizontally abutting end portions. The central portion has a higher concentration of a first conductivity type dopant than the two horizontally abutting end portions. Such a well region may be referred to as a non-uniform super-steep retrograde well.
(FR)
Cette invention se rapporte à une structure semi-conductrice qui présente des performances de dispositif élevées et des effets de canal court améliorés. La présente invention se rapporte en particulier à un transistor à effet de champ à semi-conducteurs à oxyde métallique (MOSFET) qui comprend une faible concentration de dopant dans une couche d'inversion de la structure ; la couche d'inversion étant une couche semi-conductrice épitaxique qui est formée en haut d'une partie du substrat semi-conducteur. La structure de l'invention comprend également une région de puits d'un premier type de conductivité en dessous de la couche d'inversion, la région de puits comportant une partie centrale et deux parties d'extrémité horizontalement contiguës. La partie centrale présente une concentration supérieure de dopant d'un premier type de conductivité par rapport aux deux parties d'extrémité horizontalement contiguës. Une telle région de puits peut être appelée puits rétrograde très raide non uniforme.
Latest bibliographic data on file with the International Bureau