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1. WO2009045137 - DRIVE CIRCUIT FOR A POWER SWITCH COMPONENT

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Publication Number WO/2009/045137
Publication Date 09.04.2009
International Application No. PCT/SE2007/050713
International Filing Date 05.10.2007
IPC
H03K 19/0944 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
19Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
02using specified components
08using semiconductor devices
094using field-effect transistors
0944using MOSFET
H03K 19/0948 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
19Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
02using specified components
08using semiconductor devices
094using field-effect transistors
0944using MOSFET
0948using CMOS
H03K 19/013 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
19Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
01Modifications for accelerating switching
013in bipolar transistor circuits
H03K 19/017 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
19Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
01Modifications for accelerating switching
017in field-effect transistor circuits
CPC
H03K 17/163
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
16Modifications for eliminating interference voltages or currents
161in field-effect transistor switches
162without feedback from the output circuit to the control circuit
163Soft switching
H03K 17/284
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
28Modifications for introducing a time delay before switching
284in field effect transistor switches
H03K 17/6872
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
KPULSE TECHNIQUE
17Electronic switching or gating, i.e. not by contact-making and –breaking
51characterised by the components used
56by the use, as active elements, of semiconductor devices
687the devices being field-effect transistors
6871the output circuit comprising more than one controlled field-effect transistor
6872using complementary field-effect transistors
Applicants
  • TELEFONAKTIEBOLAGET L M ERICSSON (publ) [SE]/[SE] (AllExceptUS)
  • SVENSSON, Andreas [SE]/[SE] (UsOnly)
Inventors
  • SVENSSON, Andreas
Agents
  • ALBIHNS AB
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) DRIVE CIRCUIT FOR A POWER SWITCH COMPONENT
(FR) CIRCUIT D'ATTAQUE POUR UN COMPOSANT DE COMMUTATEUR DE PUISSANCE
front page image
Abstract
(EN)
A drive circuit (1) for a power switch component (3) comprises an input terminal (21) for receiving a drive pulse, a first (5) and a second semiconductor component (7), each having a controllable terminal, a voltage amplifying terminal and a current amplifying terminal, the current amplifying terminals of said first and second transistors being interconnected, the voltage amplifying terminal of the first semiconductor component (5) being connected to a first power rail (13) and the voltage amplifying terminal of the second semiconductor component (7) being connected to a second power rail (15), the first power rail (13) being at a higher potential than the second power rail (15), the controllable terminals of the first and second semiconductor components being interconnected, a resistor (17) and a diode (19) being connected in parallel between said controllable terminals and the input terminal (21), and a capacitor (23) being connected between said controllable terminals and said current amplifying terminals, wherein each of said semiconductor components (5, 7) has a diode (9, 11) connected between its current amplifying terminal and its voltage amplifying terminal.
(FR)
L'invention porte sur un circuit d'attaque (1) pour un composant de commutateur de puissance (3) qui comprend une borne d'entrée (21) pour recevoir une impulsion d'attaque, un premier (5) et un second composant semi-conducteur (7), ayant chacun une borne commandable, une borne d'amplification de tension et une borne d'amplification de courant, les bornes d'amplification de courant desdits premier et second transistors étant interconnectées, la borne d'amplification de tension du premier composant semi-conducteur (5) étant connectée à un premier rail d'alimentation (13) et la borne d'amplification de tension du second composant semi-conducteur (7) étant connectée à un second rail d'alimentation (15), le premier rail d'alimentation (13) étant à un potentiel supérieur au second rail d'alimentation (15), les bornes commandables des premier et second composants semi-conducteurs étant interconnectées, une résistance (17) et une diode (19) étant connectées en parallèle entre lesdites bornes commandables et la borne d'entrée (21), et un condensateur (23) étant connecté entre lesdites bornes commandables et lesdites bornes d'amplification de courant, chacun desdits composants semi-conducteurs (5, 7) ayant une diode (9, 11) connectée entre sa borne d'amplification de courant et sa borne d'amplification de tension.
Also published as
CN101816128
EP2212997
US20100237911
Latest bibliographic data on file with the International Bureau
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