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1. WO2009044681 - METHOD FOR ETHCING SILICON

Publication Number WO/2009/044681
Publication Date 09.04.2009
International Application No. PCT/JP2008/067502
International Filing Date 26.09.2008
IPC
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
CPC
H01L 21/3065
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
Applicants
  • 積水化学工業株式会社 SEKISUI CHEMICAL CO., LTD. [JP]/[JP] (AllExceptUS)
  • 石井 徹哉 ISHII, Tetsuya [JP]/[JP] (UsOnly)
  • 中嶋 節男 NAKAJIMA, Setsuo [JP]/[JP] (UsOnly)
  • 大塚 智弘 OTSUKA, Tomohiro [JP]/[JP] (UsOnly)
  • 功刀 俊介 KUNUGI, Syunsuke [JP]/[JP] (UsOnly)
  • 佐藤 崇 SATO, Takashi [JP]/[JP] (UsOnly)
Inventors
  • 石井 徹哉 ISHII, Tetsuya
  • 中嶋 節男 NAKAJIMA, Setsuo
  • 大塚 智弘 OTSUKA, Tomohiro
  • 功刀 俊介 KUNUGI, Syunsuke
  • 佐藤 崇 SATO, Takashi
Agents
  • 渡辺 昇 WATANABE, Noboru
Priority Data
2007-26254905.10.2007JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR ETHCING SILICON
(FR) PROCÉDÉ DE GRAVURE DE SILICIUM
(JA) シリコンのエッチング方法
Abstract
(EN)
[PROBLEMS] To improve the etching rate of silicon. [MEANS FOR SOLVING PROBLEMS] Water in an amount necessary for bringing the dew point of a mixed gas composed of CF4 as a fluorine material and Ar to 10°C to 40°C is added to the mixed gas, and the mixture is plasmatized at the atmospheric pressure. The plasmatized gas is mixed with an ozone-containing gas from an ozonizer (13) to prepare a reaction gas. The reaction gas contains not less than 1% by volume of ozone, a non-radical fluorine-type intermediate such as COF2, and not less than 0.4% by volume of a non-radical fluorine-type reactant such as HF. The ratio between the number of fluorine atoms (F) and the number of hydrogen atoms (H) is (F)/(H) > 1.8. This reaction gas is sprayed against a silicon film (91) (object material) having a temperature of 10°C to 50°C.
(FR)
L'invention vise à améliorer la vitesse de gravure du silicium. À cet effet, on ajoute à du gaz mixte de l'eau en quantité suffisante pour amener le point de rosée du gaz mixte composé de CF4 en tant que matériau de fluor et de Ar à 10°C à 40°C. Le mélange est plasmatisé à la pression atmosphérique. Le gaz plasmatisé est mélangé à un gaz contenant de l'ozone provenant d'un ozoneur (13) pour préparer un gaz de réaction qui ne contient pas moins de 1 % en volume d'ozone; un intermédiaire de type fluor non radical tel que COF2, ; pas moins de 0,4 % en volume d'un réactif de type fluor non radical tel que HF; et dans lequel le rapport entre le nombre d'atomes de fluor (F) et le nombre d'atomes d'hydrogène (H) est (F)/(H) > 1,8. Ce gaz de réaction est pulvérisé sur un film de silicium (91) (matériau objet) à une température allant de 10°C à 50°C.
(JA)
【課題】シリコンのエッチングレートを向上させる。 【解決手段】フッ素系原料のCFとArの混合ガスに露点が10°C~40°Cになる量の水を添加して、大気圧下でプラズマ化する。プラズマ化後のガスをオゾナイザー13からのオゾン含有ガスと混合し、反応ガスを得る。反応ガスは、1vol%以上のオゾンと、COF等の非ラジカルのフッ素系中間物質と、0.4vol%以上のHF等のフッ素系反応物質を含み、フッ素原子数(F)と水素原子数(H)の比が(F)/(H)>1.8である。この反応ガスを、温度10°C~50°Cのシリコン膜91(被処理物)に吹付ける。
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