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1. WO2009042519 - METHODS AND SYSTEMS FOR MONITORING A SOLID-LIQUID INTERFACE

Publication Number WO/2009/042519
Publication Date 02.04.2009
International Application No. PCT/US2008/076993
International Filing Date 19.09.2008
IPC
C30B 11/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
11Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
C30B 15/20 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
20Controlling or regulating
C30B 15/26 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
20Controlling or regulating
22Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
26using television detectors; using photo or X-ray detectors
CPC
C30B 11/006
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
11Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
006Controlling or regulating
C30B 15/20
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
20Controlling or regulating
C30B 15/26
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
20Controlling or regulating
22Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
26using television detectors; using photo or X-ray detectors
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
Applicants
  • BP CORPORATION NORTH AMERICA INC. [US]/[US] (AllExceptUS)
  • STODDARD, Nathan, G. [US]/[US] (UsOnly)
  • CLARK, Roger, F. [US]/[US] (UsOnly)
Inventors
  • STODDARD, Nathan, G.
  • CLARK, Roger, F.
Agents
  • NEMO, Thomas, E.
Priority Data
60/975,58927.09.2007US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHODS AND SYSTEMS FOR MONITORING A SOLID-LIQUID INTERFACE
(FR) PROCÉDÉS ET SYSTÈMES DE SURVEILLANCE D'UNE INTERFACE SOLIDE-LIQUIDE
Abstract
(EN)
Methods and systems are provided for monitoring a solid-liquid interface, including providing a vessel configured to contain an at least partially melted material; detecting radiation reflected from a surface of a liquid portion of the at least partially melted material; providing sound energy to the surface; measuring a disturbance on the surface; calculating at least one frequency associated with the disturbance; and determining a thickness of the liquid portion based on the at least one frequency, wherein the thickness is calculated based on formula (I), where ƒ is the frequency where the disturbance has an amplitude maximum, vs is the speed of sound in the material, and m is a positive integer (1, 2, 3,...).
(FR)
L'invention porte sur des procédés et sur des systèmes pour surveiller une interface solide-liquide, comprenant la disposition d'un récipient configuré pour contenir un matériau au moins partiellement fondu ; la détection du rayonnement réfléchi par la surface d'une partie liquide du matériau au moins partiellement fondu ; la communication d'une énergie sonore à la surface ; la mesure d'une perturbation à la surface ; le calcul d'au moins une fréquence associée à la perturbation ; et la détermination d'une épaisseur de la partie liquide sur la base de la ou des fréquences, l'épaisseur étant calculée sur la base de la formule (1), où f est la fréquence à laquelle la perturbation a une amplitude maximale, vs est la vitesse du son dans le matériau, et m est un entier positif (1, 2, 3,...)
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