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1. WO2009039830 - OPTOELECTRONIC SEMICONDUCTOR CHIP HAVING A MULTIPLE QUANTUM WELL STRUCTURE

Publication Number WO/2009/039830
Publication Date 02.04.2009
International Application No. PCT/DE2008/001534
International Filing Date 12.09.2008
IPC
H01L 33/06 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01S 5/343 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
34comprising quantum well or superlattice structures, e.g. single quantum well lasers , multiple quantum well lasers or graded index separate confinement heterostructure lasers
343in AIIIBV compounds, e.g. AlGaAs-laser
H01L 33/04 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/32 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
CPC
B82Y 20/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L 33/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
H01L 33/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
H01S 5/3086
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
305characterised by the doping materials used in the laser structure
3086doping of the active layer
Applicants
  • OSRAM OPTO SEMICONDUCTORS GMBH [DE]/[DE] (AllExceptUS)
  • STAUSS, Peter [DE]/[DE] (UsOnly)
  • PETER, Matthias [DE]/[DE] (UsOnly)
  • WALTER, Alexander [DE]/[DE] (UsOnly)
Inventors
  • STAUSS, Peter
  • PETER, Matthias
  • WALTER, Alexander
Agents
  • EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH
Priority Data
10 2007 046 027.026.09.2007DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHER HALBLEITERCHIP MIT EINER MEHRFACHQUANTENTOPFSTRUKTUR
(EN) OPTOELECTRONIC SEMICONDUCTOR CHIP HAVING A MULTIPLE QUANTUM WELL STRUCTURE
(FR) MICROPLAQUETTE SEMI-CONDUCTRICE OPTOÉLECTRONIQUE À STRUCTURE DE PUITS QUANTIQUES MULTIPLES
Abstract
(DE)
Es wird ein optoelektronischer Halbleiterchip mit einer aktiven Zone (20) angegeben, die eine zur Erzeugung von elektromagnetischer Strahlung vorgesehenen Mehrfachquantentopfstruktur enthält, welche eine Mehrzahl von aufeinander folgenden Quantentopfschichten (210, 220, 230) aufweist. Die Mehrfachquantentopfstruktur weist mindestens eine erste Quantentopfschicht (210) auf, die n-leitend dotiert ist und die zwischen zwei an die erste Quantentopfschicht angrenzenden, n-leitend dotierten Barriereschichten (250) angeordnet ist. Sie weist eine zweite Quantentopfschicht (220) auf, die undotiert ist und zwischen zwei an die zweite Quantentopfschicht angrenzenden Barriereschichten (250, 260) angeordnet ist, von denen eine n-leitend dotiert und die andere undotiert ist. Zudem weist die Mehrfachquantentopfstruktur mindestens eine dritte Quantentopfschicht (230) auf, die undotiert ist und die zwischen zwei an die dritte Quantentopfschicht angrenzenden, undotierten Barriereschichten (260) angeordnet ist.
(EN)
The invention relates to an optoelectronic semiconductor chip having an active zone (20), comprising a multiple quantum well structure provided for the production of electromagnetic radiation, having a plurality of sequential quantum well layers (210, 220, 230). The multiple quantum well structure comprises at least one first quantum well layer (210) that is doped in an n-conductive fashion and disposed between two barrier layers (250) doped in an n-conductive fashion and adjacent to the first quantum well layer. Said quantum well structure comprises a second quantum well layer (220) that is undoped and is disposed between two barrier layers (250, 260) adjacent to the second quantum well layer, one of said layers being doped and the other being undoped. In addition, the multiple quantum well structure comprises at least one third quantum well layer (230) that is undoped and disposed between two undoped barrier layers (260) adjacent to the third quantum well layer.
(FR)
La présente invention concerne une microplaquette semi-conductrice optoélectronique comportant une zone active (20) contenant une structure de puits quantiques multiples qui présente une pluralité de couches de puits quantiques successives (210, 220, 230). Cette structure de puits quantiques multiples présente au moins une première couche de puits quantiques (210) qui est dopée p et qui est disposée entre deux couches barrières (250) limitant la première couche de puits quantiques. La structure présente une deuxième couche de puits quantiques (220) qui n'est pas dopée et qui est disposée entre deux couches barrières (250, 260) qui limitent la deuxième couche de puits quantiques, et dont l'une est dopée n, l'autre n'était pas dopée. En outre, la structure de puits quantiques multiples présente au moins une troisième couche de puits quantiques (230) qui n'est pas dopée et qui est disposée entre deux couches barrières non dopées (260) limitant la troisième couche de puits quantique.
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