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1. (WO2009035648) NON-POLAR AND SEMI-POLAR GAN SUBSTRATES, DEVICES, AND METHODS FOR MAKING THEM
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2009/035648 International Application No.: PCT/US2008/010638
Publication Date: 19.03.2009 International Filing Date: 12.09.2008
IPC:
H01L 21/00 (2006.01) ,H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
KYMA TECHNOLOGIES, INC. [US/US]; 8829 Midway West Road Raleigh, NC 27617, US (AllExceptUS)
HANSER, Andrew, D. [US/US]; US (UsOnly)
PREBLE, Edward, A. [US/US]; US (UsOnly)
LIU, Lianghong [CN/US]; US (UsOnly)
CLITES, Terry, L. [US/US]; US (UsOnly)
EVANS, Keith, R. [US/US]; US (UsOnly)
Inventors:
HANSER, Andrew, D.; US
PREBLE, Edward, A.; US
LIU, Lianghong; US
CLITES, Terry, L.; US
EVANS, Keith, R.; US
Agent:
GOODWIN PROCTER LLP; Exchange Place Boston, MA 02109, US
Priority Data:
60/993,86714.09.2007US
Title (EN) NON-POLAR AND SEMI-POLAR GAN SUBSTRATES, DEVICES, AND METHODS FOR MAKING THEM
(FR) SUBSTRATS AU NITRURE DE GALLIUM NON POLAIRES ET SEMI POLAIRES, DISPOSITIFS, ET PROCÉDÉS DE FABRICATION DE CEUX-CI
Abstract:
(EN) Non-polar or semi-polar (Al, Ga, In)N substrates are fabricated by re-growth of (Al, Ga, In)N crystal on (Al, Ga, In)N seed crystals, wherein the size of the seed crystal expands or is increased in the lateral and vertical directions, resulting in larger sizes of non-polar and semi-polar substrates useful for optoelectronic and microelectronic devices. One or more non-polar or semi-polar substrates may be sliced from the re-grown crystal. The lateral growth rate may be greater than the vertical growth rate. The seed crystal may be a non-polar seed crystal. The seed crystal may have crystalline edges of equivalent crystallographic orientation.
(FR) Des substrats non polaires ou semi polaires (Al, Ga, In)N sont fabriqués par régénération de cristal de (Al, Ga, In)N sur des germes cristallins (Al, Ga, In)N. Dans ces substrats, la taille des germes cristallins s'accroît ou augmente dans les directions latérale et verticale, ce qui entraîne des tailles plus importantes des substrats non polaires et semi polaires utiles pour les dispositifs optoélectroniques et microélectroniques. Un ou plusieurs substrats non polaires ou semi polaires peuvent être découpés à partir du cristal régénéré. La vitesse de croissance latérale peut être supérieure à la vitesse de croissance verticale. Le germe cristallin peut être un germe cristallin non polaire. Le germe cristallin peut avoir des bords cristallins d'orientation cristallographique équivalente.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)