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1. WO2009014337 - METHOD OF MANUFACTURING CRYSTALLINE SEMICONDUCTOR THIN FILM

Publication Number WO/2009/014337
Publication Date 29.01.2009
International Application No. PCT/KR2008/004145
International Filing Date 15.07.2008
IPC
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
CPC
H01L 21/02422
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02422Non-crystalline insulating materials, e.g. glass, polymers
H01L 21/02532
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02532Silicon, silicon germanium, germanium
H01L 21/02667
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02656Special treatments
02664Aftertreatments
02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Applicants
  • SILICONFILE TECHNOLOGIES INC. [KR]/[KR] (AllExceptUS)
  • LEE, Byoung Su [KR]/[KR] (UsOnly)
Inventors
  • LEE, Byoung Su
Agents
  • LEE, Cheol Hee
Priority Data
10-2007-007330423.07.2007KR
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF MANUFACTURING CRYSTALLINE SEMICONDUCTOR THIN FILM
(FR) PROCÉDÉ DE FABRICATION D'UN FILM MINCE SEMI-CONDUCTEUR CRISTALLIN
Abstract
(EN)
Provided is a method of manufacturing a crystalline semiconductor thin film formed on an amorphous or poly-crystalline substrate such as a glass substrate, a ceramic substrate, and a plastic substrate through induction heating using photo-charges. The method of manufacturing a crystalline semiconductor thin film includes a process of forming a low-concentration semiconductor layer on an inexpensive amorphous or poly-crystalline substrate such as a glass substrate, a ceramic substrate, and a plastic substrate and a process of crystallizing the low-concentration semiconductor layer through an induction heating manner using photo-charges. Accordingly, a low-concentration crystalline semiconductor thin film having characteristics better than those of general amorphous or poly-crystalline semiconductor thin film can be obtained by using simple processes at low production cost.
(FR)
L'invention concerne un procédé de fabrication d'un film mince semi-conducteur cristallin formé sur un substrat amorphe ou polycristallin tel qu'un substrat de verre, un substrat de céramique, et un substrat de plastique par chauffage par induction en utilisant des charges photoélectriques. Le procédé de fabrication d'un film mince semi-conducteur cristallin comprend un processus de formation d'une couche semi-conductrice à basse concentration sur un substrat amorphe ou polycristallin bon marché tel qu'un substrat de verre, un substrat de céramique, et un substrat de plastique et un processus de cristallisation de la couche semi-conductrice à basse concentration par un chauffage par induction en utilisant des charges photoélectriques. Par conséquent, un film mince à semi-conducteur cristallin à basse concentration offrant de meilleures caractéristiques que celles du film mince semi-conducteur amorphe ou polycristallin général peut être obtenu en utilisant des procédés simples à un coût de production réduit.
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