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1. WO2009013941 - SUBSTRATE SUCTION APPARATUS AND METHOD FOR MANUFACTURING THE SAME

Publication Number WO/2009/013941
Publication Date 29.01.2009
International Application No. PCT/JP2008/060341
International Filing Date 05.06.2008
IPC
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
B65G 49/06 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
49Conveying systems characterised by their application for specified purposes not otherwise provided for
05for fragile or damageable materials or articles
06for fragile sheets, e.g. glass
CPC
B65G 2249/02
BPERFORMING OPERATIONS; TRANSPORTING
65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
2249Aspects relating to conveying systems for the manufacture of fragile sheets
02Controlled or contamination-free environments or clean space conditions
B65G 2249/045
BPERFORMING OPERATIONS; TRANSPORTING
65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
2249Aspects relating to conveying systems for the manufacture of fragile sheets
04Arrangements of vacuum systems or suction cups
045Details of suction cups suction cups
B65G 49/061
BPERFORMING OPERATIONS; TRANSPORTING
65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
49Conveying systems characterised by their application for specified purposes not otherwise provided for
05for fragile or damageable materials or articles
06for fragile sheets, e.g. glass
061Lifting, gripping, or carrying means, for one or more sheets forming independent means of transport, e.g. suction cups, transport frames
B65G 49/065
BPERFORMING OPERATIONS; TRANSPORTING
65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
49Conveying systems characterised by their application for specified purposes not otherwise provided for
05for fragile or damageable materials or articles
06for fragile sheets, e.g. glass
063Transporting devices for sheet glass
064in a horizontal position
065supported partially or completely on fluid cushions, e.g. a gas cushion
H01L 21/6833
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6831using electrostatic chucks
6833Details of electrostatic chucks
H01L 21/6838
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6838with gripping and holding devices using a vacuum; Bernoulli devices
Applicants
  • 株式会社クリエイティブ テクノロジー CREATIVE TECHNOLOGY CORPORATION [JP]/[JP] (AllExceptUS)
  • 辰己 良昭 TATSUMI, Yoshiaki [JP]/[JP] (UsOnly)
  • 宮下 欣也 MIYASHITA, Kinya [JP]/[JP] (UsOnly)
Inventors
  • 辰己 良昭 TATSUMI, Yoshiaki
  • 宮下 欣也 MIYASHITA, Kinya
Agents
  • 塚原 孝和 TSUKAHARA, Takakazu
Priority Data
2007-19060123.07.2007JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE SUCTION APPARATUS AND METHOD FOR MANUFACTURING THE SAME
(FR) APPAREIL D'ASPIRATION DE SUBSTRAT ET PROCÉDÉ DE FABRICATION
(JA) 基板吸着装置及びその製造方法
Abstract
(EN)
Provided is a substrate suction apparatus which has a vacuum suction mechanism and an electrostatic attraction mechanism, and improves planarity of a subject to be processed by improving uniformity in vacuum suction power. A method for manufacturing such substrate suction apparatus is also provided. A substrate suction apparatus (1) is provided with a base board (2), a dielectric body (3), an electrostatic attraction mechanism (4) and a vacuum suction mechanism (5). Specifically, the dielectric body (3) is composed of a downmost dielectric layer (31), an intermediate dielectric layer (32) and a topmost dielectric layer (33). The electrostatic attraction mechanism (4) is composed of attraction electrodes (41, 42) and a direct current power supply. The vacuum suction mechanism (5) is composed of a groove (51), a suction channel (52), a porous dielectric body (3) and the porous attraction electrodes (41, 42). The downmost dielectric layer (31), the intermediate dielectric layer (32) and the topmost dielectric layer (33) are formed by spraying ceramic particles, and the attraction electrodes (41, 42) are formed by spraying tungsten particles. The average pore diameter and porosity of the downmost dielectric layer (31) are set maximum, and those of the topmost dielectric layer (33) are set minimum.
(FR)
La présente invention concerne un appareil d'aspiration de substrat équipé d'un mécanisme d'aspiration à vide et d'un mécanisme d'attraction électrostatique, qui améliore la planéité d'un sujet à traiter en améliorant l'uniformité de puissance d'aspiration sous vide. L'invention concerne un procédé de fabrication d'un tel appareil d'aspiration de substrat. L'appareil d'aspiration de substrat (1) selon l'invention comporte un panneau de base (2), un corps diélectrique (3), un mécanisme d'attraction électrostatique (4) et un mécanisme d'aspiration à vide (5). De façon spécifique, le corps diélectrique (3) est composé d'une couche diélectrique inférieure (31), d'une couche diélectrique intermédiaire (32) et d'une couche diélectrique supérieure (33). Le mécanisme d'attraction électrostatique (4) est composé d'électrodes d'attraction (41, 42) et d'une alimentation en courant continu. Le mécanisme d'aspiration à vide (5) comporte une cannelure (51), un canal d'aspiration (52), un corps diélectrique poreux (3) et les électrodes d'attraction (41, 42). La couche diélectrique inférieure (31), la couche diélectrique intermédiaire (32) et la couche diélectrique supérieure (33) sont formées en pulvérisant des particules de céramique, et les électrodes d'attraction (41, 42) sont formées en pulvérisant des particules de tungstène. Le diamètre moyen des pores et la porosité de la couche diélectrique inférieure (31) sont ajustés pour être maximum, et ceux de couche diélectrique supérieure (33) sont ajustés pour être minimum.
(JA)
 真空吸着機構と静電吸着機構とを備え、真空吸着力の均一性を高めて、被加工物の平坦性を向上させた基板吸着装置及びその製造方法を提供する。 基板吸着装置(1)は、基盤(2)と誘電体(3)と静電吸着機構(4)と真空吸着機構(5)とを備える。具体的には、誘電体(3)を最下位誘電体層(31)と中間誘電体層(32)と最上位誘電体層(33)とで構成し、静電吸着機構(4)を吸着電極(41,42)と直流電源とで構成した。真空吸着機構(5)は、溝(51)及び吸気通路(52)と、多孔質の誘電体(3)と多孔質の吸着電極(41,42)とで構成した。そして、最下位誘電体層(31)と中間誘電体層(32)と最上位誘電体層(33)とをセラミック粒子の溶射で形成し、吸着電極(41,42)をタングステン粒子の溶射で形成した。また、最下位誘電体層(31)の平均孔径及び気孔率を最も大きく設定し、最上位誘電体層(33)の平均孔径及び気孔率を最も小さく設定した。
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