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1. WO2009012423 - PRINTING OF CONTACT METAL AND INTERCONNECT METAL VIA SEED PRINTING AND PLATING

Publication Number WO/2009/012423
Publication Date 22.01.2009
International Application No. PCT/US2008/070389
International Filing Date 17.07.2008
IPC
H01L 31/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
H01L 21/28518
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28512on semiconductor bodies comprising elements of Group IV of the Periodic System
28518the conductive layers comprising silicides
H01L 21/288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
288from a liquid, e.g. electrolytic deposition
H01L 21/32051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
32051Deposition of metallic or metal-silicide layers
H01L 21/32053
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
32051Deposition of metallic or metal-silicide layers
32053of metal-silicide layers
H01L 21/76838
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
H01L 21/76873
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
76841Barrier, adhesion or liner layers
76871Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
76873for electroplating
Applicants
  • KOVIO, INC. (AllExceptUS)
  • CHANDRA, Aditi [US]/[US] (UsOnly)
  • KAMATH, Arvind [IN]/[US] (UsOnly)
  • CLEEVES, James, Montague [US]/[US] (UsOnly)
  • ROCKENBERGER, Joerg [DE]/[US] (UsOnly)
  • TAKASHIMA, Mao [JP]/[US] (UsOnly)
Inventors
  • CHANDRA, Aditi
  • KAMATH, Arvind
  • CLEEVES, James, Montague
  • ROCKENBERGER, Joerg
  • TAKASHIMA, Mao
Agents
  • FORTNEY, Andrew, D.
Priority Data
60/959,97717.07.2007US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PRINTING OF CONTACT METAL AND INTERCONNECT METAL VIA SEED PRINTING AND PLATING
(FR) IMPRESSION DE MÉTAL DE CONTACT ET IMPRESSION ET MÉTALLISATION PAR GERMES DE TROUS MÉTALLIQUES D'INTERCONNEXION
Abstract
(EN)
Methods of forming contacts (and optionally, local interconnects) usmg an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. The method of forming contacts includes depositing an ink of a silicide-forming metal onto an exposed silicon surface, drying the ink to form a silicideforming metal precursor, and heating the silicide-forming metal precursor and the silicon surface to form a metal suicide contact. Optionally, the metal precursor ink may be selectively deposited onto a dielectric layer adjacent to the exposed silicon surface to form a metal-containing interconnect. Furthermore, one or more bulk conductive metal(s) may be deposited on remaining metal precursor ink and/or the dielectric layer. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects.
(FR)
La présente invention concerne des procédés de formation de contacts (et éventuellement, des interconnexions locales) au moyen d'une encre comportant un métal formant du siliciure, des dispositifs électroniques tels que des diodes et/ou des transistors comprenant de tels contacts et d'interconnexions locales (éventuelles), ainsi que des procédés de formation de tels dispositifs. Le procédé de formation de contacts comprend le dépôt d'une encre d'un métal de formation de siliciure sur une surface de silicium exposée, le séchage de l'encre pour former un précurseur de métal de formation de siliciure, et le chauffage du précurseur de métal de formation de siliciure et de la surface de silicium pour former un contact de siliciure métallique. Éventuellement, l'encre de précurseur de métal peut être déposée de manière sélective sur une couche diélectrique adjacente à la surface de silicium exposée pour former une interconnexion contenant du métal. En outre, un ou des métaux conducteurs de substrats peuvent être déposés sur l'encre de précurseur de métal restante et/ou la couche diélectrique. Des dispositifs électriques, tels que des diodes et des transistors peuvent être fabriqués au moyen de tel contact imprimé et/ou de telles interconnexions locales. Une encre métallique peut être imprimée pour des contacts ainsi que pour des interconnexions locales simultanément, ou en variante, le métal imprimé peut servir de germe pour le dépôt autocatalytique d'autres métaux si on souhaite utiliser des métaux différents pour les lignes de contact et des interconnexions. Cette technique réduit avantageusement le nombre d'étapes de traitement et ne nécessite aucune gravure.
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