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1. WO2009012346 - METHODS FOR FABRICATING P-TYPE CADMIUM SELENIDE

Publication Number WO/2009/012346
Publication Date 22.01.2009
International Application No. PCT/US2008/070240
International Filing Date 16.07.2008
IPC
H01L 21/385 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
38Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions
385using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
CPC
H01L 21/0256
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02551Group 12/16 materials
0256Selenides
H01L 21/02579
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
0257Doping during depositing
02573Conductivity type
02579P-type
H01L 21/385
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
34the devices having semiconductor bodies not provided for in groups ; H01L21/0405, H01L21/0445; , H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
38Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
385using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
H01L 31/0336
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
0328including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
0336in different semiconductor regions, e.g. Cu2X/CdX hetero-junctions, X being an element of Group VI of the Periodic System
H01L 31/0392
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0392including thin films deposited on metallic or insulating substrates ; ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
H01L 31/046
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
042PV modules or arrays of single PV cells
0445including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
Applicants
  • ASCENT SOLAR TECHNOLOGIES, INC. [US]/[US] (AllExceptUS)
  • WOODS, Lawrence, M. [US]/[US] (UsOnly)
  • RIBELIN, Rosine, M. [US]/[US] (UsOnly)
Inventors
  • WOODS, Lawrence, M.
  • RIBELIN, Rosine, M.
Agents
  • DIZEREGA, Philip
Priority Data
60/950,08716.07.2007US
60/956,10715.08.2007US
61/031,65226.02.2008US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHODS FOR FABRICATING P-TYPE CADMIUM SELENIDE
(FR) PROCÉDÉS DE FABRICATION DE SÉLÉNIURE DE CADMIUM DE TYPE-P
Abstract
(EN)
A method of making a p-type Cadmium Selenide semiconductor material includes depositing an initial doped Cadmium Selenide layer, using a dopant that includes at least one element selected from the group consisting of Group IIIB elements and Group VIIB elements. The doped layer of Cadmium Selenide is then coated with a solution including a solvent and at least one of the following chlorides: chlorides of Group IA elements, chlorides of group IB elements, and chlorides of Group IIIB elements. The doped layer of Cadmium Selenide is then heated in an environment having an ambient temperature of between 300 and 500 degrees Celsius for a time between three and thirty minutes while at least partially preventing the evaporation of Selenium from the doped layer of Cadmium Selenide.
(FR)
L'invention concerne un procédé de fabrication d'un matériau à semiconducteur de séléniure de cadmium de type-p qui consiste à déposer une couche initiale de séléniure de cadmium dopée, au moyen d'un dopant qui contient au moins un élément sélectionné dans le groupe constitué d'éléments des groupes IIIB et VIIB. La couche dopée de séléniure de cadmium est ensuite revêtue d'une solution contenant un solvant et au moins les chlorures suivants: chlorures des éléments du groupe IA, chlorures des éléments du groupe IB et chlorures des éléments du groupe IIIB. La couche dopée de séléniure de cadmium est ensuite chauffée dans un environnement à température ambiante comprise entre 300 et 500 degrés Celsius durant un temps compris entre trois et trente minutes, tout en évitant au moins partiellement l'évaporation de séléniure de la couche dopée de séléniure de cadmium.
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