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1. WO2009012120 - SYSTEM AND METHOD FOR FORMING SOLAR CELL STRUCTURES

Publication Number WO/2009/012120
Publication Date 22.01.2009
International Application No. PCT/US2008/069684
International Filing Date 10.07.2008
IPC
H01L 31/068 2012.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
CPC
H01L 31/02168
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
02161for devices characterised by at least one potential jump barrier or surface barrier
02167for solar cells
02168the coatings being antireflective or having enhancing optical properties for the solar cells
H01L 31/0547
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
0547comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
H01L 31/068
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
068the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
Y02E 10/52
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
52PV systems with concentrators
Y02E 10/547
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
10Energy generation through renewable energy sources
50Photovoltaic [PV] energy
547Monocrystalline silicon PV cells
Applicants
  • SILICON CHINA (HK) LIMITED [CN]/[CN] (AllExceptUS)
  • CHAN, Chung [US]/[CN] (UsOnly)
Inventors
  • CHAN, Chung
Agents
  • CHUN CHANG
Priority Data
12/170,42309.07.2008US
60/949,82813.07.2007US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SYSTEM AND METHOD FOR FORMING SOLAR CELL STRUCTURES
(FR) SYSTÈME ET PROCÉDÉ DE FABRICATION DE STRUCTURES DE CELLULE SOLAIRE
Abstract
(EN)
A multi-value capacitor with a safety disconnect mechanism has a capacitive element with six capacitive sections, a common wire and six section wires enclosed in a cylindrical metal can with a metal lid that normally has a concave configuration. The wires are soldered to contacts extending through the concave metal lid. The safety disconnect mechanism includes an external insulator disk with terminals. The terminals in the insulator disk align with the contacts in the metal lid. The center common terminal of the insulator disk is fixedly riveted to the center common contact of the metal lid. Spring elements form the electrical connection between the section terminals of the insulator disk and the section contacts in the metal lid.
(FR)
L'invention concerne un condensateur à plusieurs valeurs avec un mécanisme de déconnexion de sécurité qui présente un élément capacitif avec six sections capacitives, un fil commun et six fils profilés enfermés dans un boîtier métallique cylindrique avec un couvercle métallique qui a normalement une configuration concave. Les fils sont soudés à des contacts s'étendant à travers le couvercle métallique concave. Le mécanisme de déconnexion de sécurité comprend un disque isolant externe avec des bornes. Les bornes dans le disque isolant s'alignent avec les contacts dans le couvercle métallique. La borne commune centrale du disque isolant est rivée fixement au contact commun central du couvercle métallique. Des éléments de ressort forment la connexion électrique entre les bornes de section du disque isolant et les contacts de section dans le couvercle métallique.
Also published as
Latest bibliographic data on file with the International Bureau