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1. WO2009011363 - ETCHING SOLUTION COMPOSITION

Publication Number WO/2009/011363
Publication Date 22.01.2009
International Application No. PCT/JP2008/062837
International Filing Date 16.07.2008
IPC
H01L 21/308 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
308using masks
CPC
C23F 1/20
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
1Etching metallic material by chemical means
10Etching compositions
14Aqueous compositions
16Acidic compositions
20for etching aluminium or alloys thereof
H01L 21/32134
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
32133by chemical means only
32134by liquid etching only
H01L 21/32139
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
32139using masks
Applicants
  • 林純薬工業株式会社 Hayashi Pure Chemical Ind, Ltd. [JP]/[JP] (AllExceptUS)
  • 三洋電機株式会社 SANYO ELECTRIC CO., LTD. [JP]/[JP] (AllExceptUS)
  • 三洋半導体製造株式会社 SANYO Semiconductor Manufacturing Co., Ltd. [JP]/[JP] (AllExceptUS)
  • 三洋半導体株式会社 Sanyo Semiconductor Co., Ltd. [JP]/[JP] (AllExceptUS)
  • 田湖 次広 TAGO, Tsuguhiro [JP]/[JP] (UsOnly)
  • 松田 知丈 MATSUDA, Tomotake [JP]/[JP] (UsOnly)
  • 木村 真弓 KIMURA, Mayumi [JP]/[JP] (UsOnly)
  • 青山 哲男 AOYAMA, Tetsuo [JP]/[JP] (UsOnly)
Inventors
  • 田湖 次広 TAGO, Tsuguhiro
  • 松田 知丈 MATSUDA, Tomotake
  • 木村 真弓 KIMURA, Mayumi
  • 青山 哲男 AOYAMA, Tetsuo
Agents
  • 伊藤 英彦 ITOH, Hidehiko
Priority Data
2007-18804319.07.2007JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ETCHING SOLUTION COMPOSITION
(FR) COMPOSITION DE SOLUTION DE GRAVURE
(JA) エッチング液組成物
Abstract
(EN)
The object is to etch a metal film (e.g., an aluminum film, an aluminum alloy film) with good controllability while preventing or inhibiting the occurrence of resist bleeding, thereby producing a metal film having the intended tapered shape and excellent flatness. An aqueous solution containing phosphoric acid, nitric acid and an organic acid salt is used as an etching solution composition for etching a metal film on a substrate. The organic acid salt used may be at least one member selected from the group consisting of an ammonium salt, an amine salt, a quaternary ammonium salt and an alkali metal salt of at least one member selected from the group consisting of an aliphatic monocarboxylic acid, an aliphatic polycarboxylic acid, an aliphatic oxycarboxylic acid, an aromatic monocarboxylic acid, an aromatic polycarboxylic acid and an aromatic oxycarboxylic acid. The organic acid salt is used at a concentration ranging from 0.1 to 20 wt%. The etching solution composition can be used when the metal film is made of aluminum or an aluminum alloy.
(FR)
L'invention vise à graver un film métallique (par exemple, un film d'aluminium, un film d'alliage d'aluminium) avec une bonne contrôlabilité, tout en empêchant ou en inhibant l'apparition d'une purge de résist, produisant ainsi un film métallique ayant la forme effilée souhaitée et une planéité excellente. Une solution aqueuse contenant de l'acide phosphorique, de l'acide nitrique et un sel d'acide organique est utilisée en tant que composition de solution de gravure pour graver un film métallique sur un substrat. Le sel d'acide organique utilisé peut être au moins un élément choisi dans le groupe constitué par un sel d'ammonium, un sel d'amine, un sel d'ammonium quaternaire et un sel de métal alcalin d'au moins un élément choisi dans le groupe constitué par un acide monocarboxylique aliphatique, un acide polycarboxylique aliphatique, un acide oxycarboxylique aliphatique, un acide monocarboxylique aromatique, un acide polycarboxylique aromatique et un acide oxycarboxylique aromatique. Le sel d'acide organique est utilisé à une concentration sesituant dans la plage allant de 0,1 à 20 % en poids. La composition de solution de gravure peut être utilisée lorsque le film métallique est fait d'aluminium ou d'un alliage d'aluminium.
(JA)
 アルミニウム膜やアルミニウム合金膜などの金属膜を制御性よく、かつ、レジスト滲みの発生を抑制、防止しつつエッチングし、意図するテーパー形状と、優れた平坦性を有する金属膜を得ることができるようにする。 リン酸、硝酸、有機酸塩を含有する水溶液を、基板上の金属膜をエッチングするためのエッチング液組成物として用いる。 前記有機酸塩として、脂肪族モノカルボン酸、脂肪族ポリカルボン酸、脂肪族オキシカルボン酸、芳香族モノカルボン酸、芳香族ポリカルボン酸、芳香族オキシカルボン酸からなる群より選ばれる少なくとも1種の、アンモニウム塩、アミン塩、第四級アンモニウム塩、アルカリ金属塩からなる群より選ばれる少なくとも1種を用いる。 また、前記有機酸塩の濃度を、0.1~20重量%の範囲とする。 また、本発明のエッチング液組成物を、前記金属膜がアルミニウムまたはアルミニウム合金である場合に用いる。
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