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1. WO2009011221 - A RESISTANCE CHANGE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

Publication Number WO/2009/011221
Publication Date 22.01.2009
International Application No. PCT/JP2008/061935
International Filing Date 25.06.2008
IPC
G11C 13/00 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
CPC
G11C 11/5685
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
56using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
5685using storage elements comprising metal oxide memory material, e.g. perovskites
G11C 13/0007
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0007comprising metal oxide memory material, e.g. perovskites
G11C 13/0061
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0061Timing circuits or methods
G11C 13/0064
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0064Verifying circuits or methods
G11C 13/0069
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0069Writing or programming circuits or methods
G11C 2013/009
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0069Writing or programming circuits or methods
009Write using potential difference applied between cell electrodes
Applicants
  • KABUSHIKI KAISHA TOSHIBA [JP]/[JP] (AllExceptUS)
  • TODA, Haruki [JP]/[JP] (UsOnly)
  • NAKAI, Hiroto [JP]/[JP] (UsOnly)
Inventors
  • TODA, Haruki
  • NAKAI, Hiroto
Agents
  • ITAMI, Masaru
Priority Data
2007-18699618.07.2007JP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A RESISTANCE CHANGE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
(FR) DISPOSITIF DE MÉMOIRE À CHANGEMENT DE RÉSISTANCE ET SON PROCÉDÉ DE PROGRAMMATION
Abstract
(EN)
A method of programming a resistance change memory device includes: applying program voltage pulses to a memory cell for programming a target resistance value; setting thermal relaxation times between the respective program voltage pulses; and controlling the shape of each the program voltage pulse in accordance with the present cell's resistance value determined by the preceding program voltage pulse application.
(FR)
L'invention concerne un procédé de programmation d'un dispositif de mémoire à changement de résistance, lequel procédé comprend les opérations consistants à : appliquer des impulsions de tension de programmation à une cellule mémoire pour programmer une valeur de résistance cible ; régler des temps de relaxation thermique entre les impulsions de tension de programme respectives ; et commander la forme de chacune des impulsions de tension de programmation conformément à la valeur de résistance de la cellule actuelle déterminée par l'application d'impulsions de tension de programme précédentes.
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