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1. WO2009011045 - CRYSTALLIZATION DEVICE

Publication Number WO/2009/011045
Publication Date 22.01.2009
International Application No. PCT/JP2007/064168
International Filing Date 18.07.2007
IPC
H01L 21/268 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
268using electromagnetic radiation, e.g. laser radiation
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
CPC
B23K 26/046
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
04Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
046Automatically focusing the laser beam
B23K 26/048
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26Working by laser beam, e.g. welding, cutting or boring
02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
04Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
046Automatically focusing the laser beam
048by controlling the distance between laser head and workpiece
H01L 21/02532
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02532Silicon, silicon germanium, germanium
H01L 21/02678
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02656Special treatments
02664Aftertreatments
02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
02675using laser beams
02678Beam shaping, e.g. using a mask
H01L 21/02686
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02656Special treatments
02664Aftertreatments
02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
02675using laser beams
02686Pulsed laser beam
H01L 21/02691
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02656Special treatments
02664Aftertreatments
02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
02691Scanning of a beam
Applicants
  • 株式会社 島津製作所 SHIMADZU CORPORATION [JP]/[JP] (AllExceptUS)
  • 秋田 典孝 AKITA, Noritaka [JP]/[JP] (UsOnly)
  • 高見 芳夫 TAKAMI, Yoshio [JP]/[JP] (UsOnly)
Inventors
  • 秋田 典孝 AKITA, Noritaka
  • 高見 芳夫 TAKAMI, Yoshio
Agents
  • 喜多 俊文 KITA, Toshifumi
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CRYSTALLIZATION DEVICE
(FR) DISPOSITIF DE CRISTALLISATION
(JA) 結晶化装置
Abstract
(EN)
[PROBLEMS] To provide a crystallization device which makes high-speed adjustment of an imaging position of the laser light against variation in the substrate height. [MEANS FOR SOLVING PROBLEMS] A crystallization device (1) comprises an optics system (2) including an illumination optics system (2b) for irradiating the laser light, an optical modulation element (2c) which modulates the laser light into the light beam with the specified light intensity distribution and an imaging optics system (2d) for imaging the light modulated by the optical modulation element onto a substrate, and a substrate stage (3) for supporting a substrate (20), wherein a thin film attached on the substrate is melted with the modulated light for crystallization. The crystallization device (1) is provided with a substrate height detector section (4) for detecting the height in the Z-axial direction of the substrate (20). The crystallization device makes high-speed adjustment of an imaging position of the laser light against variation in the substrate height by controlling a height of the substrate stage using the predetermined substrate height data.
(FR)
L'invention vise à proposer un dispositif de cristallisation qui effectue un ajustement à vitesse élevée d'une position d'imagerie de la lumière laser en fonction d'une variation de la hauteur de substrat. A cet effet, l'invention porte sur un dispositif de cristallisation (1) qui comprend un système d'optique (2) comprenant un système d'optique d'éclairage (2b) pour émettre la lumière laser, un élément de modulation optique (2c) qui module la lumière laser en le faisceau lumineux avec la distribution d'intensité de lumière spécifiée et un système d'optique d'imagerie (2d) pour imager la lumière modulée par l'élément de modulation optique sur un substrat, et un étage de substrat (3) pour supporter un substrat (20), un film mince attaché sur le substrat étant amené à fondre par la lumière modulée pour une cristallisation. Le dispositif de cristallisation (1) comporte une section de détecteur de hauteur de substrat (4) pour détecter la hauteur dans la direction de l'axe des Z du substrat (20). Le dispositif de cristallisation effectue un ajustement à vitesse élevée d'une position d'imagerie de la lumière laser en fonction d'une variation dans la hauteur du substrat par la commande d'une hauteur de l'étage de substrat à l'aide des données de hauteur de substrat prédéterminées.
(JA)
【課題】 結晶化装置において、基板高さのばらつきに対して、レーザー光の結像位置の調整を高速で行う。 【解決手段】 結晶化装置1は、レーザー光を照射する照明光学系2bと、レーザー光を所定の光強度分布の光線に変調する光変調素子2cと、光変調素子の変調光を基板上に結像させる結像光学系2dとを含む光学系2と、基板20を支持する基板ステージ3とを備え、基板に設けられた薄膜を変調光により溶融して結晶化する。結晶化装置1は、基板20のZ軸方向の高さを検出する基板高さ検出部4を備える。基板ステージの高さ制御に用いる基板高さデータを予め求めておき、この基板高さデータを用いて基板ステージの高さ制御を行うことによって、基板高さのばらつきに対して、レーザー光の結像位置の調整を高速で行う。 
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