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1. WO2009009766 - FLIP-CHIP PHOTODIODE

Publication Number WO/2009/009766
Publication Date 15.01.2009
International Application No. PCT/US2008/069875
International Filing Date 11.07.2008
IPC
H01L 31/0203 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0203Containers; Encapsulations
H01L 31/0216 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0216Coatings
CPC
B82Y 20/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
G01S 17/74
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
17Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
74Systems using reradiation of electromagnetic waves other than radio waves, e.g. IFF, i.e. identification of friend or foe
G02F 1/0102
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
0102Constructional details, not otherwise provided for in this subclass
G02F 1/01716
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
015based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
017Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
01716Optically controlled superlattice or quantum well devices
H01L 2224/16225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
15Structure, shape, material or disposition of the bump connectors after the connecting process
16of an individual bump connector
161Disposition
16151the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
16221the body and the item being stacked
16225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
Applicants
  • CUBIC CORPORATION [US]/[US] (AllExceptUS)
  • MARYFIELD, Tony [US]/[US] (UsOnly)
  • DADKHAH, Mahyar [US]/[US] (UsOnly)
  • DAVIDSON, Thomas [US]/[US]
Inventors
  • MARYFIELD, Tony
  • DADKHAH, Mahyar
  • DAVIDSON, Thomas
Agents
  • SANDERS, Jason, A.
Priority Data
60/949,20011.07.2007US
60/949,22911.07.2007US
60/949,23011.07.2007US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) FLIP-CHIP PHOTODIODE
(FR) PHOTODIODE À CONNEXION PAR BILLES
Abstract
(EN)
A flip-chip photodiode is provided according to various embodiments. The photodiode includes a substrate and an active region. The active region is configured to receive light through the substrate. In such a configuration, the substrate not only participates in the photodiode operation. lt also acts as a light filter depending on the substrate material. In some embodiments, the active region may include solder balls that may be used to couple the photodiode to a printed circuit board. In some embodiments, the active region is coupled face-to-face with the printed circuit board.
(FR)
L'invention concerne une photodiode selon divers modes de réalisation. Dans certains modes de réalisation, la photodiode comprend un substrat et une région active. La région active est configurée pour recevoir une lumière à travers le substrat. Dans une telle configuration, non seulement le substrat participe au fonctionnement de la photodiode, mais agit également en tant que filtre de lumière en fonction du matériau du substrat. Dans certains modes de réalisation, la région active peut comprendre des billes de soudure qui peuvent être utilisées pour coupler la photodiode à une carte de circuit imprimé. Dans certains modes de réalisation, la région active est couplée face à face avec la carte de circuit imprimé.
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