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1. WO2009009765 - FLIP CHIP QUANTUM WELL MODULATOR

Publication Number WO/2009/009765
Publication Date 15.01.2009
International Application No. PCT/US2008/069874
International Filing Date 11.07.2008
IPC
G02F 1/017 2006.01
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
015based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
017Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
CPC
B82Y 20/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
G01S 17/74
GPHYSICS
01MEASURING; TESTING
SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
17Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
74Systems using reradiation of electromagnetic waves other than radio waves, e.g. IFF, i.e. identification of friend or foe
G02F 1/0102
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
0102Constructional details, not otherwise provided for in this subclass
G02F 1/01716
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour 
015based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
017Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
01716Optically controlled superlattice or quantum well devices
H01L 2224/16225
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
10Bump connectors; Manufacturing methods related thereto
15Structure, shape, material or disposition of the bump connectors after the connecting process
16of an individual bump connector
161Disposition
16151the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
16221the body and the item being stacked
16225the item being non-metallic, e.g. insulating substrate with or without metallisation
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
Applicants
  • CUBIC CORPORATION [US]/[US] (AllExceptUS)
  • DADKHAH, Mahyar [US]/[US] (UsOnly)
  • MARYFIELD, Tony [US]/[US] (UsOnly)
  • DAVIDSON, Thomas [US]/[US] (UsOnly)
Inventors
  • DADKHAH, Mahyar
  • MARYFIELD, Tony
  • DAVIDSON, Thomas
Agents
  • SANDERS, Jason, A.
Priority Data
60/949,20011.07.2007US
60/949,22911.07.2007US
60/949,23011.07.2007US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) FLIP CHIP QUANTUM WELL MODULATOR
(FR) MODULATEUR À PUITS QUANTIQUES SUR PUCE DE TYPE “ FLIP-CHIP ”
Abstract
(EN)
A quantum well modulator (100) configured to absorb or transmit light depending on an applied voltage is provided according to various embodiments. The quantum well modulator includes a substrate (115), a p-type (110) and n-type (105) semiconductor layers as well as a quantum well layer (130), each of which are deposited above the substrate (115). The substrate (115) is configured to filter light incident thereon, wherein the substrate (115) does not include a reflective surface. The flip-chip quantum well modulator (115) is configured to substantially absorb light received through the substrate (115) when a first voltage is applied. The flip-chip quantum well modulator (115) is configured to substantially transmit light received through the substrate (115) when a second voltage is applied.
(FR)
L'invention concerne, selon divers modes de réalisation, un modulateur à puits quantiques (100) configuré pour absorber ou transmettre de la lumière selon une tension appliquée. Le modulateur à puits quantiques inclut un substrat (115), des couches semi-conductrices de type n (105) et de type p (110) ainsi qu'une couche de puits quantiques (130), chacune desquelles étant déposée sur le substrat (115). Le substrat (115) est configuré pour filtrer la lumière incidente, ledit substrat (115) n'incluant pas de surface réfléchissante. Le modulateur à puits quantiques sur puce de type “ flip-chip ” (100) est configuré pour absorber en grande partie la lumière reçue par l'intermédiaire du substrat (115) lorsqu'une première tension est appliquée. Le modulateur à puits quantiques sur puce de type “ flip-chip ” (115) est configuré pour transmettre en grande partie la lumière reçue par l'intermédiaire du substrat (115) lorsqu'une seconde tension est appliquée.
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