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1. WO2009008659 - PLASMA ETCHING APPARATUS AND METHOD OF ETCHING WAFER

Publication Number WO/2009/008659
Publication Date 15.01.2009
International Application No. PCT/KR2008/004026
International Filing Date 09.07.2008
IPC
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
CPC
H01L 21/31116
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
31105Etching inorganic layers
31111by chemical means
31116by dry-etching
H01L 21/32136
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
32133by chemical means only
32135by vapour etching only
32136using plasmas
H01L 21/67069
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67063for etching
67069for drying etching
H01L 21/7684
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76838characterised by the formation and the after-treatment of the conductors
7684Smoothing; Planarisation
Applicants
  • SOSUL CO., LTD. [KR]/[KR] (AllExceptUS)
  • RHA, Kwan Goo [KR]/[KR] (UsOnly)
  • LEE, Jung Hee [KR]/[KR] (UsOnly)
  • JANG, Chul Hee [KR]/[KR] (UsOnly)
  • LEE, Gil Hun [KR]/[KR] (UsOnly)
  • HAN, Young Ki [KR]/[KR] (UsOnly)
Inventors
  • RHA, Kwan Goo
  • LEE, Jung Hee
  • JANG, Chul Hee
  • LEE, Gil Hun
  • HAN, Young Ki
Agents
  • NAM, Seung-Hee
Priority Data
10-2007-006970411.07.2007KR
10-2007-006970511.07.2007KR
10-2007-007669531.07.2007KR
Publication Language English (EN)
Filing Language Korean (KO)
Designated States
Title
(EN) PLASMA ETCHING APPARATUS AND METHOD OF ETCHING WAFER
(FR) APPAREIL DE GRAVURE AU PLASMA ET PROCÉDÉ PERMETTANT DE GRAVER UNE TRANCHE
Abstract
(EN)
Provided is a plasma etching equipment and a method of etching a wafer using the plasma etching equipment. The plasma etching equipment includes a chamber, a wafer support disposed in the chamber and configured to support a wafer and move the wafer vertically, a plasma generation unit configured to generate plasma in the chamber, an etch gas supply unit configured to supply an etch gas into the chamber, and a remote plasma generation unit configured to excite a post-process gas into a plasma state and supply it into the chamber.
(FR)
Cette invention concerne un dispositif de gravure au plasma et un procédé permettant de graver une tranche au moyen du dispositif de gravure au plasma. Le dispositif de gravure au plasma comprend une chambre, un support de tranche placé dans la chambre et conçu pour maintenir une tranche et pour la déplacer verticalement, une unité de production de plasma conçue pour produire du plasma dans la chambre, et une unité d'alimentation en gaz de gravure conçu pour assurer l'alimentation en gaz de gravure à l'intérieur de la chambre, et une unité de production de plasma à distance conçue pour exciter un gaz de post-traitement à l'état de plasma et pour l'introduire dans la chambre.
Latest bibliographic data on file with the International Bureau