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1. WO2009008041 - MATERIAL FOR INSULATING FILM, MULTILAYERED WIRING BOARD, METHOD FOR MANUFACTURING THE MULTILAYERED WIRING BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE THEREOF

Publication Number WO/2009/008041
Publication Date 15.01.2009
International Application No. PCT/JP2007/063586
International Filing Date 06.07.2007
IPC
H01B 3/30 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
3Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
18mainly consisting of organic substances
30plastics; resins; waxes
C08G 77/60 2006.01
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
77Macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon
60in which all the silicon atoms are connected by linkages other than oxygen atoms
H01L 21/312 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
312Organic layers, e.g. photoresist
H05K 3/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3Apparatus or processes for manufacturing printed circuits
46Manufacturing multi-layer circuits
CPC
C08G 77/60
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
60in which all the silicon atoms are connected by linkages other than oxygen atoms
C09D 183/16
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
183Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
16in which all the silicon atoms are connected by linkages other than oxygen atoms
H01B 3/46
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
3Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
18mainly consisting of organic substances
30plastics; resins; waxes
46silicones
H01L 21/02123
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
H01L 21/02211
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02205the layer being characterised by the precursor material for deposition
02208the precursor containing a compound comprising Si
02211the compound being a silane, e.g. disilane, methylsilane or chlorosilane
H01L 21/02282
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02282liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Applicants
  • 富士通株式会社 FUJITSU LIMITED [JP]/[JP] (AllExceptUS)
  • 小林 靖志 KOBAYASHI, Yasushi [JP]/[JP] (UsOnly)
  • 中田 義弘 NAKATA, Yoshihiro [JP]/[JP] (UsOnly)
  • 尾崎 史朗 OZAKI, Shirou [JP]/[JP] (UsOnly)
Inventors
  • 小林 靖志 KOBAYASHI, Yasushi
  • 中田 義弘 NAKATA, Yoshihiro
  • 尾崎 史朗 OZAKI, Shirou
Agents
  • 廣田 浩一 HIROTA, Koichi
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MATERIAL FOR INSULATING FILM, MULTILAYERED WIRING BOARD, METHOD FOR MANUFACTURING THE MULTILAYERED WIRING BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE THEREOF
(FR) MATÉRIAU POUR FILM ISOLANT, CARTE DE CÂBLAGE MULTICOUCHE, PROCÉDÉ DE FABRICATION DE LA CARTE DE CÂBLAGE MULTICOUCHE, DISPOSITIF SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION DU DISPOSITIF SEMI-CONDUCTEUR
(JA) 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法
Abstract
(EN)
This invention provides a material for an insulating film, which is suitable for the formation of a low-permittivity and high-strength insulating film, a multilayered wiring board, which can reduce the parasitic capacity between wirings, a method for efficiently manufacturing the multilayred wiring board, a high-speed and highly reliable semiconductor device, and a method for efficiently manufacturing the semiconductor device. The material for an insulating film is characterized by comprising at least a polycarbosilane compound having a structure represented by the following structural formula (1) wherein R1s may be the same or different in the repetition of n times and represent either a hydrocarbon having 1 to 4 carbon atoms or an aromatic hydrocarbon; R2s may be the same or different in the repetition of n times and represent either a hydrocarbon having 1 to 4 carbon atoms or an aromatic hydrocarbon; and n is an integer of 5 to 5,000.
(FR)
Cette invention porte sur un matériau pour un film isolant, qui est approprié pour la formation d'un film isolant à permittivité faible et résistance élevée, sur une carte de câblage multicouche qui peut réduire la capacité parasite entre des câblages, sur un procédé pour fabriquer de manière efficace la carte de câblage multicouche, sur un dispositif semi-conducteur à vitesse élevée et hautement fiable, et sur un procédé pour fabriquer de manière efficace le dispositif semi-conducteur. Le matériau pour le film isolant est caractérisé par le fait qu'il comprend au moins un composé de polycarbosilane ayant une structure représentée par la formule structurale suivante (1) dans laquelle les R1 peuvent être identiques ou différents et répétés n fois et représentent soit un hydrocarbure ayant 1 à 4 atomes de carbone, soit un hydrocarbure aromatique; les R2 peuvent être identiques ou différents dans la répétition de n fois et représentent soit un hydrocarbure ayant 1 à 4 atomes de carbone, soit un hydrocarbure aromatique; et n est un entier de 5 à 5000.
(JA)
 低誘電率で高強度な絶縁膜の形成に好適に使用可能な絶縁膜材料、配線間の寄生容量が低減可能な多層配線基板及びその効率的な製造方法、並びに、高速で信頼性の高い半導体装置及びその効率的な製造方法を提供することを目的とする。  本発明の絶縁膜材料は、下記構造式(1)で表される構造を有するポリカルボシラン化合物を少なくとも含むことを特徴とする。  ただし、前記構造式(1)中、Rは、n回の繰返しの中で、互いに同一であってもよいし異なっていてもよく、炭素数1~4の炭化水素及び芳香族炭化水素のいずれかを表す。Rは、n回の繰返しの中で、互いに同一であってもよいし異なっていてもよく、炭素数1~4の炭化水素及び芳香族炭化水素のいずれかを表す。nは、5~5,000の整数を表す。
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