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1. WO2009007314 - DIFFUSED INTEGRATED RESISTOR

Publication Number WO/2009/007314
Publication Date 15.01.2009
International Application No. PCT/EP2008/058660
International Filing Date 04.07.2008
IPC
H01L 27/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
H01L 29/8605 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
8605Resistors with PN junction
CPC
H01L 27/0676
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
0611integrated circuits having a two-dimensional layout of components without a common active region
0641without components of the field effect type
0676comprising combinations of diodes, or capacitors or resistors
H01L 27/0802
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
0802Resistors only
H01L 29/8605
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
8605Resistors with PN junctions
Applicants
  • STMICROELECTRONICS SA [FR]/[FR] (AllExceptUS)
  • PONTAROLLO, Serge [FR]/[FR] (UsOnly)
  • BERGER, Dominique [FR]/[FR] (UsOnly)
Inventors
  • PONTAROLLO, Serge
  • BERGER, Dominique
Agents
  • CABINET BEAUMONT
Priority Data
075632106.07.2007FR
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) DIFFUSED INTEGRATED RESISTOR
(FR) RÉSISTANCE INTÉGRÉE DIFFUSÉE
Abstract
(EN)
A resistor formed of a lightly-doped P- type region (35) formed in a portion (29) of a lightly-doped N-type semiconductor well (29) extending on a lightly-doped P-type semiconductor substrate (21), the well being laterally delimited by a P-type wall (27) extending down to the substrate, the portion of the well being delimited, vertically, by a heavily-doped N-type area (31) at the limit between the well and the substrate and, horizontally, by a heavily-doped N- type wall (33). A diode (45) is placed between a terminal (37) of the resistor and the heavily-doped N-type wall (33), the cathode of the diode being connected to said terminal.
(FR)
L'invention concerne une résistance constituée d'une région de type P (35) faiblement dopée formée dans une partie (29) d'un puits semi-conducteur de type N (29) légèrement dopé s'étendant sur un substrat semi-conducteur de type P (21) légèrement dopé. Le puits est délimité latéralement par une paroi de type P (27) s'étendant jusqu'au substrat. La partie du puits est délimitée verticalement par une région de type N (31) fortement dopée à la limite entre le puits et le substrat et, horizontalement, par une paroi de type N (33) fortement dopée. Une diode (45) est placée entre une borne (37) de la résistance et la paroi de type N (33) fortement dopée, la cathode de la diode étant connectée à ladite borne.
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