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1. WO2009006157 - FLOATING BODY MEMORY ARRAY

Publication Number WO/2009/006157
Publication Date 08.01.2009
International Application No. PCT/US2008/068184
International Filing Date 25.06.2008
IPC
H01L 27/108 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
CPC
G11C 11/404
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
403with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
404with one charge-transfer gate, e.g. MOS transistor, per cell
G11C 2211/4016
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
2211Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
401Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
4016Memory devices with silicon-on-insulator cells
G11C 7/02
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
7Arrangements for writing information into, or reading information out from, a digital store
02with means for avoiding parasitic signals
Applicants
  • INTEL CORPORATION [US]/[US] (AllExceptUS)
  • AVCI, Uygar, E. [TR]/[US] (UsOnly)
  • CHANG, Peter, L., D. [US]/[US] (UsOnly)
  • SOMASEKHAR, Dinesh [IN]/[US] (UsOnly)
Inventors
  • AVCI, Uygar, E.
  • CHANG, Peter, L., D.
  • SOMASEKHAR, Dinesh
Agents
  • VINCENT, Lester, J.
Priority Data
11/772,19130.06.2007US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) FLOATING BODY MEMORY ARRAY
(FR) MATRICE MEMOIRE DE CORPS FLOTTANTS
Abstract
(EN)
Provided herein are embodiments of layouts for applying impact ionization potentials across the channel of a selected floating body cell in an array without having to impose the potential on other unselected cells.
(FR)
Des modes de réalisation de la présente invention concernent des topologies d'application de potentiels d'ionisation par choc sur le canal d'une cellule de corps flottant sélectionnée dans une matrice, sans imposer ce potentiel à d'autres cellules non sélectionnées.
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