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1. (WO2008109204) MULTIFINGER CARBON NANOTUBE FIELD-EFFECT TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2008/109204 International Application No.: PCT/US2008/052281
Publication Date: 12.09.2008 International Filing Date: 29.01.2008
IPC:
H01L 21/336 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
Applicants: BURKE, Peter, J.[US/US]; US (UsOnly)
MCKERNAN, Steffen[US/US]; US (UsOnly)
WANG, Dawei[CN/US]; US (UsOnly)
YU, Zhen[CN/US]; US (UsOnly)
RF NANO CORPORATION[US/US]; 4311 Jamboree Road Suite 150 Newport Beach, CA 92660, US (AllExceptUS)
Inventors: BURKE, Peter, J.; US
MCKERNAN, Steffen; US
WANG, Dawei; US
YU, Zhen; US
Agent: BLANCHE, Bradley, D.; Greenberg Traurig 2450 Colorado Avenue Suite 400 East Santa Monica, CA 90404, US
Priority Data:
12/021,04228.01.2008US
60/887,30630.01.2007US
Title (EN) MULTIFINGER CARBON NANOTUBE FIELD-EFFECT TRANSISTOR
(FR) TRANSISTOR À EFFET DE CHAMP À NANOTUBES DE CARBONE À PLUSIEURS DOIGTS
Abstract:
(EN) A multifinger carbon nanotube field-effect transistor (CNT FET) is provided in which a plurality of nanotube top gated FETs are combined in a finger geometry along the length of a single carbon nanotube, an aligned array of nanotubes, or a random array of nanotubes. Each of the individual FETs are arranged such that there is no geometrical overlap between the gate and drain finger electrodes over the single carbon nanotube so as to minimize the Miller capacitance (Cgd) between the gate and drain finger electrodes. A low-K dielectric may be used to separate the source and gate electrodes in the multifinger CNT FET so as to further minimize the Miller capacitance between the source and gate electrodes.
(FR) L'invention concerne un transistor à effet de champ à nanotubes de carbone à plusieurs doigts (CNT FET) dans lequel une pluralité de FET à grille dessus à nanotube sont combinés en une géométrie en forme de doigt le long de la longueur d'un nanotube en carbone unique, en un réseau aligné de nanotubes, ou en un réseau aléatoire de nanotubes. Chacun des FET est agencé de telle sorte qu'il n'y a pas de chevauchement géométrique entre les électrodes de grille et de drain en forme de doigt au-dessus du nanotube de carbone unique, de manière à minimiser la capacité de Miller (Cgd) entre les électrodes de grille et de train en forme de doigt. Une constante diélectrique basse peut être utilisée pour séparer les électrodes de source et de grille dans le CNT FET à plusieurs doigts, de manière à minimiser davantage la capacité de Miller entre les électrodes de source et de grille.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (EPO) (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)