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1. WO2008109204 - MULTIFINGER CARBON NANOTUBE FIELD-EFFECT TRANSISTOR

Publication Number WO/2008/109204
Publication Date 12.09.2008
International Application No. PCT/US2008/052281
International Filing Date 29.01.2008
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
H01L 27/283
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
283comprising components of the field-effect type
H01L 27/285
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
285Integrated circuits with a common active layer, e.g. cross point devices
H01L 51/0048
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0032Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials
0045Carbon containing materials, e.g. carbon nanotubes, fullerenes
0048Carbon nanotubes
H01L 51/0508
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier ; multistep processes for their manufacture
0504the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices
0508Field-effect devices, e.g. TFTs
Applicants
  • RF NANO CORPORATION [US]/[US] (AllExceptUS)
  • BURKE, Peter, J. [US]/[US] (UsOnly)
  • MCKERNAN, Steffen [US]/[US] (UsOnly)
  • WANG, Dawei [CN]/[US] (UsOnly)
  • YU, Zhen [CN]/[US] (UsOnly)
Inventors
  • BURKE, Peter, J.
  • MCKERNAN, Steffen
  • WANG, Dawei
  • YU, Zhen
Agents
  • BLANCHE, Bradley, D.
Priority Data
12/021,04228.01.2008US
60/887,30630.01.2007US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MULTIFINGER CARBON NANOTUBE FIELD-EFFECT TRANSISTOR
(FR) TRANSISTOR À EFFET DE CHAMP À NANOTUBES DE CARBONE À PLUSIEURS DOIGTS
Abstract
(EN)
A multifinger carbon nanotube field-effect transistor (CNT FET) is provided in which a plurality of nanotube top gated FETs are combined in a finger geometry along the length of a single carbon nanotube, an aligned array of nanotubes, or a random array of nanotubes. Each of the individual FETs are arranged such that there is no geometrical overlap between the gate and drain finger electrodes over the single carbon nanotube so as to minimize the Miller capacitance (Cgd) between the gate and drain finger electrodes. A low-K dielectric may be used to separate the source and gate electrodes in the multifinger CNT FET so as to further minimize the Miller capacitance between the source and gate electrodes.
(FR)
L'invention concerne un transistor à effet de champ à nanotubes de carbone à plusieurs doigts (CNT FET) dans lequel une pluralité de FET à grille dessus à nanotube sont combinés en une géométrie en forme de doigt le long de la longueur d'un nanotube en carbone unique, en un réseau aligné de nanotubes, ou en un réseau aléatoire de nanotubes. Chacun des FET est agencé de telle sorte qu'il n'y a pas de chevauchement géométrique entre les électrodes de grille et de drain en forme de doigt au-dessus du nanotube de carbone unique, de manière à minimiser la capacité de Miller (Cgd) entre les électrodes de grille et de train en forme de doigt. Une constante diélectrique basse peut être utilisée pour séparer les électrodes de source et de grille dans le CNT FET à plusieurs doigts, de manière à minimiser davantage la capacité de Miller entre les électrodes de source et de grille.
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