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1. (WO2008109204) MULTIFINGER CARBON NANOTUBE FIELD-EFFECT TRANSISTOR

Pub. No.:    WO/2008/109204    International Application No.:    PCT/US2008/052281
Publication Date: Sat Sep 13 01:59:59 CEST 2008 International Filing Date: Wed Jan 30 00:59:59 CET 2008
IPC: H01L 21/336
Applicants: RF NANO CORPORATION
BURKE, Peter, J.
MCKERNAN, Steffen
WANG, Dawei
YU, Zhen
Inventors: BURKE, Peter, J.
MCKERNAN, Steffen
WANG, Dawei
YU, Zhen
Title: MULTIFINGER CARBON NANOTUBE FIELD-EFFECT TRANSISTOR
Abstract:
A multifinger carbon nanotube field-effect transistor (CNT FET) is provided in which a plurality of nanotube top gated FETs are combined in a finger geometry along the length of a single carbon nanotube, an aligned array of nanotubes, or a random array of nanotubes. Each of the individual FETs are arranged such that there is no geometrical overlap between the gate and drain finger electrodes over the single carbon nanotube so as to minimize the Miller capacitance (Cgd) between the gate and drain finger electrodes. A low-K dielectric may be used to separate the source and gate electrodes in the multifinger CNT FET so as to further minimize the Miller capacitance between the source and gate electrodes.