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1. (WO2008105250) THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2008/105250 International Application No.: PCT/JP2008/052597
Publication Date: 04.09.2008 International Filing Date: 08.02.2008
IPC:
H01L 29/10 (2006.01) ,H01L 29/786 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
10
with semiconductor regions connected to an electrode not carrying current to be rectified, amplified, or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
Applicants:
CANON KABUSHIKI KAISHA [JP/JP]; 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 1468501, JP (AllExceptUS)
KAJI, Nobuyuki [JP/JP]; JP (UsOnly)
HAYASHI, Ryo [JP/JP]; JP (UsOnly)
YABUTA, Hisato [JP/JP]; JP (UsOnly)
ABE, Katsumi [JP/JP]; JP (UsOnly)
Inventors:
KAJI, Nobuyuki; JP
HAYASHI, Ryo; JP
YABUTA, Hisato; JP
ABE, Katsumi; JP
Agent:
OKABE, Masao ; No. 602, Fuji Bldg., 2-3, Marunouchi 3-chome, Chiyoda-ku, Tokyo 1000005, JP
Priority Data:
2007-05000428.02.2007JP
Title (EN) THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING SAME
(FR) TRANSISTOR À COUCHE MINCE ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm 15 nm.
(FR) L'invention concerne un transistor à couche mince comprenant au moins un substrat, une électrode de grille, une couche isolante de grille, une couche d'oxyde semi-conducteur, une électrode de source, une électrode de drain et une couche protectrice, la couche d'oxyde semi-conducteur étant un oxyde amorphe contenant au moins l'un des éléments In, Ga et Zn, la densité de porteurs côté électrode de grille de la couche d'oxyde semi-conducteur étant supérieure à la densité de porteurs côté couche protectrice de celle-ci, et l'épaisseur de film de la couche d'oxyde semi-conducteur étant de 30 nm à 15 nm.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
US20100051937