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1. (WO2008104462) RECTIFYING ELEMENT FOR A CROSSPOINT BASED MEMORY ARRAY ARCHITECTURE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2008/104462 International Application No.: PCT/EP2008/051786
Publication Date: 04.09.2008 International Filing Date: 14.02.2008
Chapter 2 Demand Filed: 01.08.2008
IPC:
G11C 13/02 (2006.01) ,G11C 13/00 (2006.01) ,G11C 16/02 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
13
Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
02
using elements whose operation depends upon chemical change
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
13
Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
Applicants:
INTERNATIONAL BUSINESS MACHINES CORPORATION [US/US]; New Orchard Road Armonk, New York 10504, US (AllExceptUS)
IBM UNITED KINGDOM LIMITED [GB/GB]; PO Box 41 North Harbour Portsmouth Hampshire PO6 3AU, GB (MG)
GOPALAKRISHNAN, Kailash [IN/US]; US (UsOnly)
Inventors:
GOPALAKRISHNAN, Kailash; US
Agent:
GASCOYNE, Belinda; IBM United Kingdom Limited Intellectual Property Law Hursley Park Winchester Hampshire SO21 2JN, GB
Priority Data:
11/679,78527.02.2007US
Title (EN) RECTIFYING ELEMENT FOR A CROSSPOINT BASED MEMORY ARRAY ARCHITECTURE
(FR) ÉLÉMENT REDRESSEUR D'UNE ARCHITECTURE DE RÉSEAU MÉMOIRE À POINTS D'INTERSECTION
Abstract:
(EN) An asymmetrically programmed memory material (such as a solid electrolyte material) is described for use as a rectifying element for driving symmetric or substantially symmetric resistive memory elements in a crosspoint memory architecture. A solid electrolyte element (SE) has very high resistance in the OFF state and very low resistance in the ON state (because it is a metallic filament in the ON state). These attributes make it a near ideal diode. During the passage of current (during program/read/erase) of the memory element, the solid electrolyte material also programs into the low resistance state. The final state of the solid electrolyte material is reverted to a high resistance state while making sure that the final state of the memory material is the one desired.
(FR) L'invention porte sur un matériau de mémoire asymétriquement programmé (tel qu'un électrolyte solide) s'utilisant en tant qu'élément redresseur pour piloter des élément de mémoire résistifs symétriques ou quasi symétriques dans une architecture de mémoire à points d'intersection. Un élément d'électrolyte solide (SE) présente une résistance très élevée à l'état HORS et une résistance faible à l'état EN (car il s'agit d'un filament métallique à l'état EN). Ces attributs en font une diode quasi idéale. Pendant le passage de courant (pendant les opérations de programmation/lecture/effacement) de l'élément de mémoire le matériau électrolyte solide est aussi programmé pour passer à l'état de faible résistance. L'état final du matériau d'électrolyte solide revient à l'état de résistance élevée tout en assurant que l'état final du matériau d'électrolyte solide est bien l'état désiré.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020090089340EP2132750JP2010519762JP4583503