WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2008102651) AMORPHOUS INSULATOR FILM AND THIN-FILM TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2008/102651    International Application No.:    PCT/JP2008/052091
Publication Date: 28.08.2008 International Filing Date: 04.02.2008
IPC:
H01L 21/28 (2006.01), H01L 29/786 (2006.01), H01L 29/51 (2006.01), H01L 29/49 (2006.01)
Applicants: CANON KABUSHIKI KAISHA [JP/JP]; 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo, 1468501 (JP) (For All Designated States Except US).
YABUTA, Hisato [JP/JP]; (JP) (For US Only).
KAJI, Nobuyuki [JP/JP]; (JP) (For US Only).
HAYASHI, Ryo [JP/JP]; (JP) (For US Only)
Inventors: YABUTA, Hisato; (JP).
KAJI, Nobuyuki; (JP).
HAYASHI, Ryo; (JP)
Agent: OKABE, Masao; No. 602, Fuji Bldg., 2-3, Marunouchi 3-chome, Chiyoda-ku, Tokyo, 1000005 (JP)
Priority Data:
2007-037994 19.02.2007 JP
Title (EN) AMORPHOUS INSULATOR FILM AND THIN-FILM TRANSISTOR
(FR) FILM ISOLANT AMORPHE ET TRANSISTOR EN COUCHES MINCES
Abstract: front page image
(EN)An amorphous insulator film is provided which is composed of silicon (Si) oxide, in which the amorphous insulator film includes Ar and an amount of Ar included therein is equal to or larger than 3 atom% in terms of atomic ratio with respect to Si.
(FR)L'invention concerne un film isolant amorphe constitué de silicone (Si). Ce film isolant amorphe comprend de l'Ar, la quantité d'Ar comprise dans ce film étant supérieure ou égale à 3% en atomes en termes de rapport atomique par rapport à Si.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)