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Machine translation
1. (WO2008100873) A LOW COST MULTI-STATE MAGNETIC MEMORY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2008/100873    International Application No.:    PCT/US2008/053626
Publication Date: 21.08.2008 International Filing Date: 11.02.2008
IPC:
G11B 5/39 (2006.01)
Applicants: YADAV TECHNOLOGY, INC. [US/US]; 48430 Lakeview Boulevard, Fremont, CA 94539 (US) (For All Designated States Except US).
RANJAN, Rajiv, Yadav [US/US]; (US) (For US Only).
KESHTBOD, Parviz [US/US]; (US) (For US Only).
MALMHALL, Roger, Klas [SE/US]; (US) (For US Only)
Inventors: RANJAN, Rajiv, Yadav; (US).
KESHTBOD, Parviz; (US).
MALMHALL, Roger, Klas; (US)
Agent: IMAM, Maryam; 95 South Market Street, Suite 570, San Jose CA 95113 (US)
Priority Data:
11/674,124 12.02.2007 US
11/860,467 24.09.2007 US
Title (EN) A LOW COST MULTI-STATE MAGNETIC MEMORY
(FR) MÉMOIRE MAGNÉTIQUE MULTI-ÉTATS À FAIBLES COÛTS
Abstract: front page image
(EN)An embodiment of the present invention includes a multi-state current-switching magnetic memory element having a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.
(FR)Un mode de réalisation de la présente invention comprend un élément de mémoire magnétique de commutation de courant multi-états présentant une jonction à effet tunnel magnétique (MTJ), de manière à stocker plus d'un bit d'informations. La MTJ comprend une couche fixe, une couche barrière, et une couche libre non uniforme. Dans un mode de réalisation, présentant 2 bits par cellule, lorsqu'un niveau de courant sur quatre niveaux différents est appliqué sur l'élément de mémoire, le courant appliqué entraîne la commutation de la couche libre non uniforme de la MTJ dans l'un des quatre états magnétiques différents. La large distribution de courant de commutation de la MTJ est le résultat de la distribution granulométrique large de la couche libre non uniforme.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)