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Machine translation
1. (WO2008100868) NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2008/100868    International Application No.:    PCT/US2008/053619
Publication Date: 21.08.2008 International Filing Date: 11.02.2008
IPC:
G11C 11/14 (2006.01)
Applicants: YADAV TECHNOLOGY, INC. [US/US]; 48430 Lakeview Boulevard, Fremont, CA 94539 (US) (For All Designated States Except US).
RANJAN, Rajiv Yadav [US/US]; (US) (For US Only).
ESTAKHRI, Petro [US/US]; (US) (For US Only).
ASSAR, Mahmud [US/US]; (US) (For US Only).
KESHTBOD, Parviz [US/US]; (US) (For US Only)
Inventors: RANJAN, Rajiv Yadav; (US).
ESTAKHRI, Petro; (US).
ASSAR, Mahmud; (US).
KESHTBOD, Parviz; (US)
Agent: IMAM, Maryam; 95 South Market Street, Suite 570, San Jose, CA 95113 (US)
Priority Data:
11/674,124 12.02.2007 US
Title (EN) NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY
(FR) MÉMOIRE MAGNÉTIQUE NON VOLATILE BASÉE SUR UNE COMMUTATION NON UNIFORME
Abstract: front page image
(EN)One embodiment of the present invention includes a non-uniform switching based non-volatile magnetic memory element including a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer, wherein switching current is applied, in a direction that is substantially perpendicular to the fixed, barrier, first free, non-uniform and the second free layers causing switching between states of the first, second free and non-uniform layers with substantially reduced switching current.
(FR)L'invention concerne un élément de mémoire magnétique non volatile basé sur une commutation non uniforme, comprenant une couche fixe, une couche barrière formée sur la couche fixe, une première couche libre formée sur la couche barrière, une couche de commutation non uniforme (NSL) formée sur la première couche libre, et une seconde couche libre formée sur la couche de commutation non uniforme, un courant de commutation étant appliqué dans une direction qui est sensiblement perpendiculaire aux couches fixe, barrière, non uniforme et aux première et seconde couches libres provoquant une commutation entre des états des première et seconde couches libres et des couches non uniformes avec un courant de commutation sensiblement réduit.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)