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Machine translation
1. (WO2008100504) CLEAVED FACET (GA,AL,IN)N EDGE-EMITTING LASER DIODES GROWN ON SEMIPOLAR {11-2N} BULK GALLIUM NITRIDE SUBSTRATES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2008/100504    International Application No.:    PCT/US2008/001843
Publication Date: 21.08.2008 International Filing Date: 12.02.2008
IPC:
H01L 21/02 (2006.01)
Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; 1111 Franklin Street, 12th Floor, Oakland, CA 94607 (US) (For All Designated States Except US).
NAKAMURA, Shuji [US/US]; (US) (For US Only).
SPECK, James, S. [US/US]; (US) (For US Only).
DENBAARS, Steven, P. [US/US]; (US) (For US Only).
TYAGI, Anurag [IN/US]; (US) (For US Only)
Inventors: NAKAMURA, Shuji; (US).
SPECK, James, S.; (US).
DENBAARS, Steven, P.; (US).
TYAGI, Anurag; (US)
Agent: GATES, George, H.; Gates & Cooper LLP, 6701 Center Drive West, Suite 1050, Los Angeles, CA 90045 (US)
Priority Data:
60/889,518 12.02.2007 US
Title (EN) CLEAVED FACET (GA,AL,IN)N EDGE-EMITTING LASER DIODES GROWN ON SEMIPOLAR {11-2N} BULK GALLIUM NITRIDE SUBSTRATES
(FR) DIODES LASER ÉMETTRICES DE BORD N À FACETTE CLIVÉE (GA,AL,IN) QUE L'ON FAIT CROÎTRE SUR DES SUBSTRATS SEMIPOLAIRES (11-2N) AU NITRURE DE GALLIUM EN VRAC
Abstract: front page image
(EN)A Ill-nitride edge-emitting laser diode is formed on a surface of a Ill-nitride substrate having a semipolar orientation, wherein the Ill-nitride substrate is cleaved by creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the Ill-nitride substrate, and then applying force along the cleavage line to create one or more cleaved facets of the Ill-nitride substrate, wherein the cleaved facets have an m-plane or α-plane orientation.
(FR)La présente invention concerne une diode laser émettrice de bord au nitrure Ill formée sur une surface d'un substrat au nitrure Ill ayant une orientation semipolaire, ledit substrat au nitrure Ill est clivé par création d'une ligne de clivage le long d'une direction sensiblement perpendiculaire à une orientation non polaire du substrat au nitrure Ill, et ensuite en appliquant la force le long de la ligne de clivage pour créer une ou plusieurs facettes clivées du substrat au nitrure Ill, lesdites facettes clivées ayant une orientation de plan-m ou de plan-α.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)