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1. (WO2008100502) AL(X)GA(1-X)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2008/100502    International Application No.:    PCT/US2008/001840
Publication Date: 21.08.2008 International Filing Date: 12.02.2008
IPC:
H01L 21/20 (2006.01)
Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; 1111 Franklin Street, 12th Floor, Oakland, CA 94607 (US) (For All Designated States Except US).
FEEZELL, Daniel, F. [US/US]; (US) (For US Only).
SCHMIDT, Mathew, C. [US/US]; (US) (For US Only).
KWANG-CHOONG, Kim [KR/KR]; (KR) (For US Only).
FARRELL, Robert, M. [US/US]; (US) (For US Only).
COHEN, Daniel, A. [US/US]; (US) (For US Only).
SPECK, James, S. [US/US]; (US) (For US Only).
DENBAARS, Steven, P. [US/US]; (US) (For US Only).
NAKAMURA, Shuji [US/US]; (US) (For US Only)
Inventors: FEEZELL, Daniel, F.; (US).
SCHMIDT, Mathew, C.; (US).
KWANG-CHOONG, Kim; (KR).
FARRELL, Robert, M.; (US).
COHEN, Daniel, A.; (US).
SPECK, James, S.; (US).
DENBAARS, Steven, P.; (US).
NAKAMURA, Shuji; (US)
Agent: GATES, George, H.; Gates & Cooper LLP, 6701 Center Drive West, Suite 1050, Los Angeles, CA 90045 (US)
Priority Data:
60/889,510 12.02.2007 US
Title (EN) AL(X)GA(1-X)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES
(FR) DIODES LASER ET DIODES ELECTROLUMINESCENTES A BASE DE NITRURE III NON POLAIRES, EXEMPTES DE GAINE AL(X)GA(1-X)N
Abstract: front page image
(EN)A method for fabricating AlxGa1-xN-cladding-free nonpolar Ill-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
(FR)L'invention concerne un procédé de fabrication de diodes laser ou de diodes électroluminescentes à base de nitrure III non polaires, exemptes de gaine AlxGa1-xN. Du fait de l'absence de champs de polarisation dans les plans de cristallisation non polaires, les dispositifs non polaires selon l'invention présentent des puits quantiques épais servant de guides d'ondes optiques qui confinent efficacement le mode optique à la zone active et éliminent le besoin de couches de gainage de guide d'ondes contenant de l'aluminium.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)