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1. (WO2008100405) DIAMONDOID MONOLAYERS AS ELECTRON EMITTERS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2008/100405    International Application No.:    PCT/US2008/001597
Publication Date: 21.08.2008 International Filing Date: 07.02.2008
IPC:
H01J 1/304 (2006.01)
Applicants: REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; 111 Franklin Street, Fifth Floor, Oakland, CA 94607-5200 (US) (For All Designated States Except US).
THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY [US/US]; 651 Serra Street, Stanford, CA 94305 (US) (For All Designated States Except US).
YANG, Wanli [CN/US]; (US) (For US Only).
FABBRI, Jason, D. [US/US]; (US) (For US Only).
MELOSH, Nicholas, A. [US/US]; (US) (For US Only).
HUSSAIN, Zahid [PK/US]; (US) (For US Only).
SHEN, Zhi-Xun [US/US]; (US) (For US Only)
Inventors: YANG, Wanli; (US).
FABBRI, Jason, D.; (US).
MELOSH, Nicholas, A.; (US).
HUSSAIN, Zahid; (US).
SHEN, Zhi-Xun; (US)
Agent: HAYWORTH, Melissa, M.; Crowell & Moring LLP, Intellectual Property Group, P.O. Box 14300, Washington, DC 20044-4300 (US)
Priority Data:
11/704,910 12.02.2007 US
Title (EN) DIAMONDOID MONOLAYERS AS ELECTRON EMITTERS
(FR) MONOCOUCHES DE DIAMANTOIDES SERVANT D'EMETTEURS D'ELECTRONS
Abstract: front page image
(EN)Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.
(FR)L'invention concerne des émetteurs d'électrons mettant en œuvre des monocouches de diamantoïdes, de préférence des monocouches de diamantoïdes supérieurs auto-assemblés. Une émission d'électrons haute intensité peut être obtenue au moyen de ces monocouches de diamantoïdes, en particulier lorsque les monocouches sont constituées de diamantoïdes supérieurs. L'application de ces monocouches permet de modifier la structure de bande de substrats et d'émettre des électrons monochromatiques. En outre, les émissions d'électrons haute intensité peuvent améliorer considérablement l'efficacité d'émetteurs d'électrons à effet de champ dans des applications industrielles et commerciales.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)