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1. (WO2008099720) MELT COMPOSITION FOR GALLIUM NITRIDE SINGLE CRYSTAL GROWTH AND METHOD FOR GROWING GALLIUM NITRIDE SINGLE CRYSTAL
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2008/099720    International Application No.:    PCT/JP2008/051892
Publication Date: 21.08.2008 International Filing Date: 30.01.2008
IPC:
C30B 29/38 (2006.01), C30B 9/00 (2006.01)
Applicants: NGK Insulators, Ltd. [JP/JP]; 2-56, Suda-cho, Mizuho-ku, Nagoya-shi, Aichi 4678530 (JP) (For All Designated States Except US).
OSAKA UNIVERSITY [JP/JP]; 1-1, Yamadaoka, Suita-shi, Osaka 5650871 (JP) (For All Designated States Except US).
TOYODA GOSEI CO., LTD. [JP/JP]; 1 Aza Nagahata, Ooaza Ochiai, Haruhi-cho, Nishikasugai-gun, Aichi 4520961 (JP) (For All Designated States Except US).
IWAI, Makoto [JP/JP]; (JP) (For US Only).
SHIMODAIRA, Takanao [JP/JP]; (JP) (For US Only).
YAMAMURA, Yoshihiko [JP/JP]; (JP) (For US Only).
SASAKI, Takatomo [JP/JP]; (JP) (For US Only).
MORI, Yusuke [JP/JP]; (JP) (For US Only).
KAWAMURA, Fumio [JP/JP]; (JP) (For US Only).
YAMASAKI, Shiro [JP/JP]; (JP) (For US Only)
Inventors: IWAI, Makoto; (JP).
SHIMODAIRA, Takanao; (JP).
YAMAMURA, Yoshihiko; (JP).
SASAKI, Takatomo; (JP).
MORI, Yusuke; (JP).
KAWAMURA, Fumio; (JP).
YAMASAKI, Shiro; (JP)
Agent: HOSODA, Masutoshi; Jowa Takanawa BLDG. 7F, 5-4, Takanawa 1-chome, Minato-ku, Tokyo 1080074 (JP)
Priority Data:
2007-035059 15.02.2007 JP
Title (EN) MELT COMPOSITION FOR GALLIUM NITRIDE SINGLE CRYSTAL GROWTH AND METHOD FOR GROWING GALLIUM NITRIDE SINGLE CRYSTAL
(FR) COMPOSITION DE MASSE FONDUE POUR LA CROISSANCE D'UN MONO-CRISTAL DE NITRURE DE GALLIUM ET PROCÉDÉ DE CROISSANCE D'UN MONO-CRISTAL DU NITRURE DE GALLIUM
(JA) 窒化ガリウム単結晶育成用融液組成物および窒化ガリウム単結晶を育成する方法
Abstract: front page image
(EN)Disclosed is a melt composition for growing a gallium nitride single crystal by a flux method, which contains gallium, sodium and barium. In this melt composition, 0.05-0.3 mol% of barium is contained per 100 mol% of sodium.
(FR)L'invention porte sur une composition de masse fondue pour la croissance d'un mono-cristal de nitrure de gallium par un procédé de flux, qui contient du gallium, du sodium et du baryum. Dans cette composition de masse fondue, 0,05-0,3 % en mole de baryum est contenu pour 100 % en mole de sodium.
(JA)窒化ガリウム単結晶をフラックス法によって育成するための融液組成物であって、ガリウム、ナトリウム、バリウムを含有する融液組成物を提供する。融液組成物におけるナトリウムの量を100mol%としたときのバリウムの量が0.05~0.3mol%である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)