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Machine translation
1. (WO2008097910) PHASE CHANGE MEMORY DEVICES WITH,BIPOLAR TRANSITSTORS AND MANUFACTURING METHODS THEREOF
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2008/097910    International Application No.:    PCT/US2008/052924
Publication Date: 14.08.2008 International Filing Date: 04.02.2008
IPC:
H01L 27/24 (2006.01), H01L 27/102 (2006.01)
Applicants: MARVELL WORLD TRADE LTD. [BB/BB]; L'Horizon, Gunsite Road, Brittons Hill, St. Michael, 14027 (BB) (For All Designated States Except US).
WU, Albert [US/US]; (US) (For US Only).
WEI, Chien-Chuan [US/US]; (US) (For US Only).
SWITZER, Roger [US/US]; (US) (For US Only)
Inventors: WU, Albert; (US).
WEI, Chien-Chuan; (US).
SWITZER, Roger; (US)
Agent: SCHWABE, WILLIAMSON & WYATT, P.C.; Pacwest Center, Suite 1900, 1211 SW Fifth Avenue, Portland, OR 97204 (US)
Priority Data:
60/888,139 05.02.2007 US
12/024,986 01.02.2008 US
Title (EN) PHASE CHANGE MEMORY DEVICES WITH,BIPOLAR TRANSITSTORS AND MANUFACTURING METHODS THEREOF
(FR) DISPOSITIFS DE MÉMOIRE DE SYSTÈME À CHANGEMENT DE PHASE (PCM) COMPORTANT DES TRANSISTORS À JONCTIONS BIPOLAIRES ET PROCÉDÉS DE FABRICATION DE CEUX-CI
Abstract: front page image
(EN)Methods for fabricating highly compact memory devices are described herein. The methods include forming a bipolar ^unction transistor (BJT) structure on a substrate including creating a base (72) of the BJT structure on the substrate (60) and creating an emitter (80) of the BJT structure on top of the base opposite of the substrate. A heating element (142, 232) is then constructed on the emitter of the BJT structure, wherein the heating element includes a material to generate heat when provided with an electrical current from the emitter. A phase change material (PCM) cell (150, 250) is then built on the heating element opposite of the BJT structure.
(FR)L'invention concerne des procédés de fabrication de dispositifs de mémoire PCM hautement compacts. Les procédés peuvent comprendre la fabrication d'une structure de transistor à jonctions bipolaires (BJT) sur un substrat comprenant la création d'une base de la structure BJT sur le substrat et la création d'un émetteur de la structure BJT sur la partie supérieure de la base opposée au substrat. Un élément chauffant peut ensuite être construit sur l'émetteur de la structure BJT, l'élément chauffant comprenant un matériau pour générer de la chaleur lorsqu'il est alimenté avec un courant électrique provenant de l'émetteur. Une cellule de matériau à changement de phase (PCM) peut ensuite être construite sur l'élément chauffant opposé de la structure BJT.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)